Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces
Shiyi Mao,
Tinghong Gao,
Lianxin Li
et al.
Abstract:Gallium nitride (GaN) is frequently used as the primary
material
for manufacturing high-brightness light-emitting diodes (LEDs). Recently,
atomic layer deposition has become increasingly prevalent across microelectronics,
optoelectronics, and nanotechnology as a method for thin-film growth.
Gaining insights into the process of thin-film growth can significantly
enhance the device performance. Herein, molecular dynamics was used
to simulate GaN thin film growth on substrates with different patterned
surfaces. R… Show more
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