The influence of trapped space charge on the double-injection switching

Abstract

Investigations of traps are carried out by means of double‐injection switching at high‐resistivity Au‐compensated p+‐i‐n+ Si‐diodes. The measurements indicate that the temperature dependence of the threshold voltage is strongly affected by the rise time of the measuring voltage. This behaviour can be explained by the capture of injected electrons on Au‐impurity centres in the “intrinsic” region of the double‐injection diode. The presence of these traps allows to realize a memory effect in the double‐injection diode.