2014
DOI: 10.1007/s10971-014-3568-1
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The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology

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Cited by 16 publications
(4 citation statements)
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“…Huang et al [35] improved the DBS of the Al 2 O 3 -SiO 2 -TiO 2 ceramics by doping Ni 2 O 3 , and they attributed the improvement to inhibiting the oxygen vacancies because of the reaction 1/2Ni 2 O 3 → NiO + 1/2O 2 . Yao et al [36] improved the DBS of the Al 2 O 3 film by doping TiO 2 , and they attributed the improvement to the decrease in the oxygen vacancies due to the doping. Much more work on the effect of point defects on the DBS of alumina ceramics is needed.…”
Section: Analyses On the Underlying Mechanisms Behind The Effects Omentioning
confidence: 99%
“…Huang et al [35] improved the DBS of the Al 2 O 3 -SiO 2 -TiO 2 ceramics by doping Ni 2 O 3 , and they attributed the improvement to inhibiting the oxygen vacancies because of the reaction 1/2Ni 2 O 3 → NiO + 1/2O 2 . Yao et al [36] improved the DBS of the Al 2 O 3 film by doping TiO 2 , and they attributed the improvement to the decrease in the oxygen vacancies due to the doping. Much more work on the effect of point defects on the DBS of alumina ceramics is needed.…”
Section: Analyses On the Underlying Mechanisms Behind The Effects Omentioning
confidence: 99%
“…Their dielectric properties were comprehensively discussed in these papers. Later on a need to still improve the obtained average breakdown strength of 1.2 MV/cm (Yao and Shan 2013) was stated (Yao et al 2015). For improving the dielectric strength, doping of the alumina layers with titanium was successful.…”
Section: Dielectric Filmsmentioning
confidence: 99%
“…For improving the dielectric strength, doping of the alumina layers with titanium was successful. Thus, the percentage of oxygen vacancies in the alumina could be reduced (Yao et al 2015).…”
Section: Dielectric Filmsmentioning
confidence: 99%
“…One of the distinct advantages of the sol-gel technology is: the chemical composition and phase composition of the material can be easily and precisely controlled. Recently, the substitution effect of doping elements (Ti 4+ , La 3+ ) on the leakage current and breakdown characteristic of amorphous alumina thin films has been studied and excellent dielectric properties of doped alumina thin films were achieved [9,10].…”
Section: Introductionmentioning
confidence: 99%