The influence of the thickness of TiO₂seeding layer on structural and electrical properties of Bi_3.15Nd_0.85Ti₃O₁₂thin films

Abstract

Thin films of Bi3.15Nd0.85Ti3O12(BNT) and BNT with various TiO2 seeding layer thicknesses BNT-Tx (x = 10, 20, 30 nm) were fabricated on Pt/Ti/SiO2/Si substrates by the sol–gel method. The influence of the TiO2 seeding layer thickness on the structural and the electrical properties of BNT thin films was investigated. The x-ray diffraction pattern indicated that the BNT thin film with a TiO2 seeding layer showed a-axis preference orientation. The Pr value was a maximum for the BNT-T20 film and decreased with both decreasing and increasing thickness. The BNT-T20 film had the largest εr and the lowest tanδ. The leakage current density of the BNT thin films with various TiO2 seeding layer thicknesses was generally in the order of 10−6–10−5 A cm−2. The surface micrograph of BNT-Tx films was more homogeneous and dense than that without a seeding layer.

Control of morphology and orientation of grains in chemical-solution-deposited Bi3.15Nd0.85Ti3O12 thin films

“…To simplify the discussion, only the (0 0 6) peak, the (2 0 0) peak and the (117) peak are taken into consideration. The degree of c-axis orientation of a BNT thin film a c is roughly estimated as [14,19] a c ¼ Ið0 0 6Þ=½Ið0 0 6Þ þ Ið1 1 7Þ þ Ið2 0 0Þ.…”

“…Chen et al [13] considered enhanced a-axis-oriented crystal growth occurred when the crystallization was performed on every spin-coated layer with sufficiently thin thickness. By introducing a TiO 2 seeding layer with the thickness of 20 nm, Li et al [14] obtained a BNT thin film with a high degree of a-axis preference orientation.…”

Microstructure and electric properties of (Na0.85K0.15)0.5Bi0.5TiO3 composited films with alternative TiO2 layers

“…According to Aoki's research, a thin TiO 2 layer would lower the crystallization temperature of the PZT thin films on Pt/Ti/SiO 2 /Si substrates . Li's research indicated that TiO 2 seed layer could change the orientation of Bi 3.15 Nd 0.85 Ti 3 O 12 to a ‐axis preference orientation . In this paper, the NKBT thin films with the TiO 2 alternative layer, either on one side, i.e., at the interface between the NKBT and substrate, or on both sides, i.e., at the interface and on the top of the NKBT, were fabricated on Pt/Ti/SiO 2 /Si substrates by the aqueous sol‐gel method.…”

Study on Substitution Effect of Bi4Ti3O12 Ferroelectric Thin Films

“…The rod-like grains increase and plate-like grains decrease in the BIT films after substitution of La 3+ or V 5+ , and also the size of plate-like grains decreases. For BIT based films, the rod-like grains are related to the growth of random orientation and the plate-like grains are related to the growth of c-axis orientation Li et al,2007). In Fig.…”