2008
DOI: 10.1016/j.jcrysgro.2008.02.018
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The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

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Cited by 26 publications
(17 citation statements)
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References 23 publications
(27 reference statements)
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“…The MOCVD structures were grown at 700 1C. The optimum values of the interruption time and the growth temperature were reported earlier in our work [15] and used here to continue investigations. The MBE MQWs are routinely grown at 500-550 1C, but the growth temperature of MOCVD samples is significantly higher than 600-650 1C, i.e.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The MOCVD structures were grown at 700 1C. The optimum values of the interruption time and the growth temperature were reported earlier in our work [15] and used here to continue investigations. The MBE MQWs are routinely grown at 500-550 1C, but the growth temperature of MOCVD samples is significantly higher than 600-650 1C, i.e.…”
Section: Methodsmentioning
confidence: 99%
“…22 GaAs QW heterostructures we have investigated the influence of the growth temperature and the interruption time on the InGaAs/GaAs QW performance [15]. We have concluded, that the growth temperature plays more significant role in the case of structures grown by MBE technique, whereas the quality of MOCVD grown structures is more sensitive to the growth interruption.…”
Section: Introductionmentioning
confidence: 96%
“…8,14 The InGaAs alloys can be grown on GaAs and InP substrate by epitaxial techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). [15][16][17] Atomic diffusion between the layers and atom exchange at the growing surface during the growth can cause some defects and non-abrupt interfaces. 18,19 Secondary ion mass spectroscopy gives excellent information about the alloy composition, atomic homogeneity, and interface characteristics of grown layers with its depth profile measurements capability in the ppm range.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, the development of MBE technique, which produces high quality layers (Jasik et al 2008) and epitaxial nanostructures, has opened an interest for the analysis of new phenomena such as formation of defects and diffusion of adatoms during thin film deposition. These are the critical steps in manufacturing integrated circuits and MEMS devices (DasGupta and DasGupta 2004;Jung et al 2005;Oguz and Gallivan 2008).…”
Section: Introductionmentioning
confidence: 99%