The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik, A.; Wnuk, A.; Wójcik-Jedlińska, Anna; Jakieła, R.; Muszalski, J.; Strupiński, Włodek; Bugajski, M.

doi:10.1016/j.jcrysgro.2008.02.018

Cited by 26 publications

(17 citation statements)

References 23 publications

(27 reference statements)

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“…The MOCVD structures were grown at 700 1C. The optimum values of the interruption time and the growth temperature were reported earlier in our work [15] and used here to continue investigations. The MBE MQWs are routinely grown at 500-550 1C, but the growth temperature of MOCVD samples is significantly higher than 600-650 1C, i.e.…”

Section: Methodsmentioning

confidence: 99%

“…22 GaAs QW heterostructures we have investigated the influence of the growth temperature and the interruption time on the InGaAs/GaAs QW performance [15]. We have concluded, that the growth temperature plays more significant role in the case of structures grown by MBE technique, whereas the quality of MOCVD grown structures is more sensitive to the growth interruption.…”

Section: Introductionmentioning

confidence: 96%

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The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik

Wnuk

Gaca

et al. 2009

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik

Wnuk

Gaca

et al. 2009

Journal of Crystal Growth

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“…8,14 The InGaAs alloys can be grown on GaAs and InP substrate by epitaxial techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). [15][16][17] Atomic diffusion between the layers and atom exchange at the growing surface during the growth can cause some defects and non-abrupt interfaces. 18,19 Secondary ion mass spectroscopy gives excellent information about the alloy composition, atomic homogeneity, and interface characteristics of grown layers with its depth profile measurements capability in the ppm range.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Asar

Özçelik

Özbay

2014

Journal of Applied Physics

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Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current–voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications.

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“…In recent years, the development of MBE technique, which produces high quality layers (Jasik et al 2008) and epitaxial nanostructures, has opened an interest for the analysis of new phenomena such as formation of defects and diffusion of adatoms during thin film deposition. These are the critical steps in manufacturing integrated circuits and MEMS devices (DasGupta and DasGupta 2004;Jung et al 2005;Oguz and Gallivan 2008).…”

Section: Introductionmentioning

confidence: 99%

A Monte Carlo investigation of Gallium and Arsenic migration on GaAs(100) surface

2011

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We perform an atomic scale simulation of GaAs/GaAs(100) growth, using the Kinetic Monte Carlo (KMC) technique, to investigate some aspects of Gallium and Arsenic surface migration. We show that the interlayer migration rate is smaller for Arsenic than for Gallium. Results suggest that upward diffusion is thermally activated while downward diffusion is kinetically controlled. We also find an oscillatory behavior of the surface diffusion rates during the growth, in close relation to the roughening of the substrate. The surface migration rates are governed by the temperature, but mostly by the Arsenic to Gallium flux ratio. The Gallium average diffusion lengths are estimated to be *440 nm at 620°C and *130 nm at 530°C, in agreement with experimental data.

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The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Cited by 26 publications

References 23 publications

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

A Monte Carlo investigation of Gallium and Arsenic migration on GaAs(100) surface

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