The influence of the electron-beam exposure of SiO 2 /Si and quartz substrates on the selective growth of graphene-like films

Electrical Properties of Selectively Deposited Graphene‐Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons

“…The data in Figure 1a indicate that the GLF was deposited only on the exposed area, see curve 1 in Figure 1a. The Raman spectrum obtained on the GLF is quite similar to that described earlier, [6] whereas the spectrum measured on the non-exposed oxide area is featureless (curve 2 in Figure 1a). The essential differences of the Raman spectra obtained on the grown GLF from those observed for highly crystalline graphene films include an intense D-peak, a broadened G-peak, a weak and broad 2D-peak along with the D þ D 0 -peak appearance.…”

“…The thickness of the grown GLF is ranged from 3 to 4 nm as was determined by atomic force microscopy measurements. [5,6] The electrical characteristics of the GLF indicate that the grown film is rather highly conductive. The GLF sheet resistance determined from the four probe measurements on the sister samples was about 10 kOhm sq À1 , the room temperature mobility and the carrier concentrations estimated based on the Hall measurements were previously found to be 127 cm 2 V À1 s À1 and 9.5 Â 10 12 cm À2 , respectively.…”

“…[5] It is important to emphasize that the film grown by CVD on the electron-beam-irradiated oxide demonstrates metallic conductivity, whereas amorphous films related to carbon contamination are highly resistive. Moreover, the designed and performed direct experiment [6] clearly demonstrated that carbon contamination was not a factor affecting the CVD deposition. Better understanding of the properties of the conductive GLF and the underlying layer of silicon oxide with e-beam-induced charges will help to establish an operative mechanism of the GLF growth rate enhancement.…”