Transfer- and lithography-free CVD of N-doped graphenic carbon thin films on non-metal substrates

Sedlovets, Daria M.; Редькин, А. Н.; Кабачков, Е. Н.; Naumov, Anton P.; Knyazev, M. A.; Moiseenko, Andrey; Korepanov, Vitaly I.

doi:10.1016/j.materresbull.2022.111943

Cited by 4 publications

(6 citation statements)

References 63 publications

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“…Since the multilayer graphene film obtained in this project is in situ grown on the silicon oxide substrates, the traditional physical transfer process is avoided, and the electrical four-probe test is particularly convenient. The electrical results show that the surface resistance of the transfer-free multilayer graphene film is below 30 kΩ/□, which is similar to the nitrogen-doped graphene film prepared in the reference [ 38 ]. Though the electrical properties of the obtained transfer-free graphene film are relatively inferior, there are still some application scenarios that do not require extremely low resistance, such as LED or THz device manufacturing [ 22 , 39 ].…”

Section: Resultssupporting

confidence: 58%

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Huang

Shi

et al. 2023

Materials

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Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO2/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices.

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Section: Resultssupporting

confidence: 58%

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Huang

Shi

et al. 2023

Materials

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“…As discussed in the Introduction, the bonding configurations of nitrogen significantly affect the material's properties. We have earlier found [23] that N-type in the N-GLFs depends on the temperature of their synthesis (see Table 1). Graphitic, % 78.9 79.5 85.9 93.8 97.9 1 The data reproduced with permission from [23].…”

Section: Resultsmentioning

confidence: 88%

“…800 • C yields in the least stable material; 1000 • C-in the samples with the lowest initial capacitance at a minimal scan rate and lower capacitance (compared to 900 • C) after cycling. To explain the effect of the synthesis temperature on the electrochemical properties of the synthesized N-GLFs, we consider two temperature-dependent characteristics (crystallite size and nitrogen configurations), which we investigated recently [23].…”

Section: Resultsmentioning

confidence: 99%

“…From Raman spectroscopy, it follows that with an increase in the synthesis temperature, the crystallite size of the deposited film increases (see Section S3 of Supplementary Materials or ref. [23]). Considering the smallest crystallite size in the N-GLF deposited at 800 • C, it can be assumed that this material gets structural disturbance due to the facilitated segregation of the graphene flakes from the solid film under the influence of the electrolyte and electric current.…”

Section: Resultsmentioning

confidence: 99%

“…We also refer to the results of our previous analytical studies [23]. Raman mapping was done with a Senterra micro-Raman system (Bruker, Berlin, Germany) in the 1000-3600 cm −1 range under 0.5 cm −1 resolution using a 532 nm laser.…”

Section: Characterizationmentioning

confidence: 99%

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N-Doped Graphene-like Film/Silicon Structures as Micro-Capacitor Electrodes

Sedlovets

2023

Materials

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Currently, the miniaturization of portable and autonomous devices is challenging for modern electronics. Graphene-based materials have recently emerged as one of the ideal candidates for supercapacitor electrodes, while Si is a common platform for direct component-on-chip integration. We have proposed the direct liquid-based CVD of N-doped graphene-like films (N-GLFs) on Si as a promising way to achieve solid-state on-chip micro-capacitor performance. Synthesis temperatures in the range from 800 °C to 1000 °C are investigated. Capacitances and electrochemical stability of the films are evaluated using cyclic voltammetry, as well as galvanostatic measurements and electrochemical impedance spectroscopy in 0.5 M Na2SO4. We have shown that N-doping is an efficient way to improve the N-GLF capacitance. 900 °C is the optimal temperature for the N-GLF synthesis with the best electrochemical properties. The capacitance rises with increasing film thickness which also has an optimum (about 50 nm). The transfer-free acetonitrile-based CVD on Si yields a perfect material for microcapacitor electrodes. Our best value of the area-normalized capacitance (960 mF/cm2) exceeds the world’s achievements among thin graphene-based films. The main advantages of the proposed approach are the direct on-chip performance of the energy storage component and high cyclic stability.

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Coconut waste to green nanomaterial: Large scale synthesis of N-doped graphene nano sheets

Siburian,

Tang,

Alias

et al. 2023

Nano-Structures & Nano-Objects

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Transfer- and lithography-free CVD of N-doped graphenic carbon thin films on non-metal substrates

Cited by 4 publications

References 63 publications

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

N-Doped Graphene-like Film/Silicon Structures as Micro-Capacitor Electrodes

Coconut waste to green nanomaterial: Large scale synthesis of N-doped graphene nano sheets

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