The influence of the base resistance modulation on switching losses in IGBTS

Reddig, Manfred; Kraus, R.

doi:10.1109/ias.1996.559266

Cited by 7 publications

(4 citation statements)

References 2 publications

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“…Finally, Table 1 reports resistance and inductance of the collector track for each IGBT die, two cases are presented: ZDC represents the static impedance values computed with (4) and (5) and ZAC gives the dynamic values taking into account skin effect and eddy current (computed at frequency=10MHz). Dissimilarities are underlined between the four IGBT positioning; figure 11 displays this different conduction path.…”

Section: Pjj'mmentioning

confidence: 99%

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Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module

Batista

Diénot²,

Mermet-Guyennet

et al. 2007

2007 7th Internatonal Conference on Power Electronics

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The compact model development of a 6,5kV field-stop IGBT module is presented. In particular, the model considers the realistic interconnection of IGBTs and anti-parallel diodes found in commercial modules, providing, next to semiconductor physics, an accurate description of electro-magnetic (EM) phenomena associated with the package and layout. A selection of simulation examples demonstrates the usefulness of the proposed solution.

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Section: Pjj'mmentioning

confidence: 99%

“…For these components the expressions for low-level injection conditions are used. The base resistance model, charge dependent, follows [5]. The position dependent base doping, NB(x), is described by means of an exponential profile for the buffer layer: while X is a fitting parameter.…”

Section: B Packaging Andinterconnectionsmentioning

confidence: 99%

Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module

Batista

Diénot²,

Mermet-Guyennet

et al. 2007

2007 7th Internatonal Conference on Power Electronics

View full text Add to dashboard Cite

show abstract

“…These oscillations are most severe at low current levels. The conductivity modulation lag effect increases the effective resistance in the circuit at turn-on [13], and helps to dampen out the turn-on oscillations. The AGD extends the duration of Stage-II turn-on operation and damps out oscillations at low current turn-on, as shown in Fig.…”

Section: A Investigation Of Turn-on Characteristicsmentioning

confidence: 99%

High-performance active gate drive for high-power IGBT's

John

Suh

Lipo

1999

IEEE Trans. on Ind. Applicat.

127

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Abstract-This paper deals with an active gate drive (AGD) technology for high-power insulated gate bipolar transistors (IGBT's). It is based on an optimal combination of several requirements necessary for good switching performance under hard-switching conditions. The scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast drive requirements for high-speed switching and low switching energy loss. The gate drive can also effectively dampen oscillations during low-current turn-on transient in the IGBT. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage AGD technique can be an effective solution.Index Terms-Active gate drive, gate drive circuit, gate resistor, insulated gate bipolar transistor switching transient.

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“…Substituting this new charge derivation in the current equations of the original PSPICE Kraus model allows one to simulate the forward and transient characteristics of the IGBT under the new charge conditions derived in(7).…”

mentioning

confidence: 99%

Advanced SPICE Modeling of Large Power IGBT Modules

Azar

Udrea

Silva

et al. 2004

IEEE Trans. on Ind. Applicat.

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An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25 C and 125 C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations.The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperaturedependent latchup modeling of power modules as well as their temperature-dependent safe operating area.

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The influence of the base resistance modulation on switching losses in IGBTS

Cited by 7 publications

References 2 publications

Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module

Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module

High-performance active gate drive for high-power IGBT's

Advanced SPICE Modeling of Large Power IGBT Modules

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