Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module

Abstract

The compact model development of a 6,5kV field-stop IGBT module is presented. In particular, the model considers the realistic interconnection of IGBTs and anti-parallel diodes found in commercial modules, providing, next to semiconductor physics, an accurate description of electro-magnetic (EM) phenomena associated with the package and layout. A selection of simulation examples demonstrates the usefulness of the proposed solution.

Novel simulation approach for transient analysis and reliable thermal management of power devices

“…Fig. 2 shows I leak as a function of applied collector-emitter voltage, V CE , measured at various base-plate temperatures for eight parallel IGBTs (i.e., 1/3 of a typical module for traction applications [4]) rated at 6.5 kV. These results corroborate the anticipated voltage and temperature dependence of I leak .…”