The influence of surface processing on properties of CdZnTe films prepared by close-spaced sublimation

Single crystal growth and effect of cleavage micro-striations on the crystallinity and optical properties of mercurous halide single crystals

“…Therefore, alumina was chosen as the main component of the polishing liquid. [37][38][39] Firstly, 7000 grit silicon carbide sandpaper was used to remove the cutting marks on the crystal surface, and then 0.3 and 0.05 μm Al 2 O 3 powder and alcohol were used to prepare polishing solutions, respectively. As shown in Fig.…”

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

“…112 The structural properties of CdZnTe thin films were also studied using one-step and twostep growth processes, where the substrate temperatures were varied in the range of 350-600 1C, and the results showed dominant diffraction peaks corresponding to the CZT (004) reflection, indicating the zinc blende structure of the films, and the other peaks corresponding to the CZT (002) reflection indicated the epitaxial growth of the deposited films. 113 The XRD patterns of CdZnTe thin films under different mechanical polishing conditions and time 114 revealed that all the CdZnTe thin films showed stronger diffraction peaks at around 2y = 23.761, corresponding to the preferential (111) orientation. The obtained (220), (311), (400) diffraction peaks were found to be very weak, indicating that the films preferentially grew along the (111) plane.…”

“…Also, with an increase in the mechanical polishing time and Zn content, the grain size was found to decrease. 114 The XRD patterns of chemically prepared Cd x Zn 1Àx Te samples annealed at 300 1C using ammonia solution as the precipitating agent and NaBH 4 solution as the reducing agent were recorded, 115 and the patterns displayed three main diffraction peaks for Cd x Zn 1Àx Te at the 2y values of approximately 241, 39.441, and 46.91, which were identified corresponding to the (111), ( 220) and (311) planes of the cubic phase, respectively. In another work, the unit cell parameters were found to decrease from CdTe to ZnTe and the Cd 0.8 Zn 0.2 Te sample showed the lowest crystallite size of 22 nm with a higher micro strain and dislocation density.…”

“…Also, with an increase in the mechanical polishing time and Zn content, the grain size was found to decrease. 114…”

Surface Planarization of CdZnTe Wafers: Effect of Slurry Formulation and CMP Processing Parameters on Surface Planarity

“…However, chemical treatment involved the usage of a bromine-based solution, which is known to induce adverse consequences that alter the surface and interfacial properties. 16 Although bromine-based solutions remove the damaged surface, it produces Te enrichment and Cd deficiencies on the surfaces. This Te-rich surface is well known to increase the surface leakage current in the device.…”