Based on the pyrolysis of trichloroethene (C~HC13), also referred to as TCE, and the thermodynamic analysis of its reaction products a substitute for TCE is found. It is characterized by better physical and chemical properties and behaves as an additive during silicon oxidation identical to HC1. This chlorinated hydrocarbon, 1.1.1.-trichloroethane (referred to as C33) is used for fabrication of MOS capacitors on n-type silicon to study the properties of oxides grown with this additive. Special attention is paid to the properties influencing the performance of charge coupled devices. Storage times of 500 sec, oxide defect density of 10/cm ~, and surface-state densities lower than 5 X 109/cm 2 eV are achieved. The cleaning effect on the furnace tube yields a mobile ion density lower than 2 X 109/cm 2. The fixed oxide charge on (100) material is 5 )< 1020 cm -2. Fabrication of CCD's with this technology proves its suitability in silicon device processing.