The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures

Green, J. M.; Osburn, C. M.; Sedgwick, T. O.

doi:10.1007/bf02652958

Cited by 13 publications

(3 citation statements)

References 24 publications

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“…This can be reduced by adding chlorine during oxidation. Physical defects resulting from the absorption at the Si-surface of airborne particulates during wafer storage or drying in filtered nitrogen and residue of the cleaning solutions are found to be responsible for defects (32). Oxidation with HC1 as well as H2 high temperature treatment seems to be very effective for the desorption of these contaminants (32).…”

Section: Resultsmentioning

confidence: 99%

“…A strong relation is found between stacking faults or dislocations and CCD video defects (60,61). On the other hand, no large effect has been observed of a high temperature treatment in a mixture of ~C1, H2, and Sill4 on the metallic content of a Siwafer (32). Recently relaxation time experiments performed on MOS capacitors grown with HC1 (62) show a strong relation between the relaxation time and crystal defects being not only large defects as stacking faults but also small etch pits whose nature is not fully understood but may be related to oxygen clusters (67).…”

Section: The Influence O~ C33 and Tce On The Silicon Dioxidesilicon I...mentioning

confidence: 99%

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The Use of 1.1.1.‐Trichloroethane as an Optimized Additive to Improve the Silicon Thermal Oxidation Technology

Janssens

Declerck

1978

J. Electrochem. Soc.

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Based on the pyrolysis of trichloroethene (C~HC13), also referred to as TCE, and the thermodynamic analysis of its reaction products a substitute for TCE is found. It is characterized by better physical and chemical properties and behaves as an additive during silicon oxidation identical to HC1. This chlorinated hydrocarbon, 1.1.1.-trichloroethane (referred to as C33) is used for fabrication of MOS capacitors on n-type silicon to study the properties of oxides grown with this additive. Special attention is paid to the properties influencing the performance of charge coupled devices. Storage times of 500 sec, oxide defect density of 10/cm ~, and surface-state densities lower than 5 X 109/cm 2 eV are achieved. The cleaning effect on the furnace tube yields a mobile ion density lower than 2 X 109/cm 2. The fixed oxide charge on (100) material is 5 )< 1020 cm -2. Fabrication of CCD's with this technology proves its suitability in silicon device processing.

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Section: Resultsmentioning

confidence: 99%

Section: The Influence O~ C33 and Tce On The Silicon Dioxidesilicon I...mentioning

confidence: 99%

The Use of 1.1.1.‐Trichloroethane as an Optimized Additive to Improve the Silicon Thermal Oxidation Technology

Janssens

Declerck

1978

J. Electrochem. Soc.

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“…A detailed examination of these data, however, indicates HC1 related oxidation procedures is no panacea for obtaining significantly improved lifetime (23)(24)(25)(26)(27)(28)(29).…”

Section: Discussionmentioning

confidence: 99%

Minority‐Carrier Lifetime: Correlation with IC Process Parameters

Huff

Chiu

1979

J. Electrochem. Soc.

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The recombination lifetime for more than 200 Czochralski, 3 in. diameter, , 11-15 ~-cm p-type silicon slices has been determined by the surface photovoltage technique. These slices were subsequently fabricated into MOS ring-dot capacitors for determination of the generation lifetime by the C-t technique. The influence of several process parameters including the temperature (900~176 and ambient (oxygen, steam, HCI) of oxidation as well as the thermal history are correlated with the material generation lifetime. Significant improvement in generation lifetime was achieved by the use of back-surface phosphorus gettering. Room-temperature generation lifetime in excess of one millisecond have been obtained in the case of a 900 ~ gate oxidation temperature.The minority-carrier lifetime is one of the most important material parameters characterizing the quality of a semiconductor sample. It can also be utilized * Electrochemical Society Active Member.

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HCl gas gettering of low‐cost silicon

Hampel

Ehrenreich

Wiehl

et al. 2013

Physica Status Solidi (a)

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HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representative of the 3d transition metals in the wafers with and without applied HCl gas gettering. The Ni concentrations were measured by inductively coupled plasma mass spectrometry (ICP-MS)

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The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures

Cited by 13 publications

References 24 publications

The Use of 1.1.1.‐Trichloroethane as an Optimized Additive to Improve the Silicon Thermal Oxidation Technology

The Use of 1.1.1.‐Trichloroethane as an Optimized Additive to Improve the Silicon Thermal Oxidation Technology

Minority‐Carrier Lifetime: Correlation with IC Process Parameters

HCl gas gettering of low‐cost silicon

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