Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
DOI: 10.1109/asmc.2003.1194479
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The influence of processing conditions on data retention behavior in a deep submicron NVM process

Abstract: Detailed investigations and process characterizations were performed to identify and resolve the source for programmed cell charge loss and data retention capability within the EPROM cells of our 0.35 pm Non-Volatile Memory process technology. Both front and hackend processing steps influenced the data retention behavior, with the most significant impact arising fiom the use of a high density plasma(HDP) oxide as the inter-metal dielectric. We postulate that cumulative charge buildup during processing lead to … Show more

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“…In FG memory, plasma damage and mobile ions have been reported to cause charge loss. [11][12][13] However, reports on such cases for SONOS memories are scarce, with the exception of a case of plasma damage. 14) Despite the fact that SONOS 2-bit storage flash memory has a unique structure, there has been no discussion on the abovementioned issues associated with memory cell scaling.…”
Section: Introductionmentioning
confidence: 99%
“…In FG memory, plasma damage and mobile ions have been reported to cause charge loss. [11][12][13] However, reports on such cases for SONOS memories are scarce, with the exception of a case of plasma damage. 14) Despite the fact that SONOS 2-bit storage flash memory has a unique structure, there has been no discussion on the abovementioned issues associated with memory cell scaling.…”
Section: Introductionmentioning
confidence: 99%