Abstract:The influence of processing parameters of aluminum oxide (Al 2 O 3) and lanthanum oxide (La 2 O 3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp) 3 ] were used as precursors separately, and H 2 O was used as oxidant. The ultra-thin La 1 − x Al x O 3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (ALD) for different pulse ratios of precursors. Effects of different La/Al precursor pulse ratios on the phy… Show more
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