La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.
In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (VFB) and the magnitude of gate leakage current density.
The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 − xAlxO3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (ALD) for different pulse ratios of precursors. Effects of different La/Al precursor pulse ratios on the physical properties and electrical characteristics of La1 − xAlxO3 films are studied. The preliminary testing results indicate that the increase of La precursor pulse can improve the characteristics of film, which has significant effects on the dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability of film.
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