The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

Tetelbaum, D. I.; Trushin, Sergey; Бурдов, В. А.; Golovanov, A.I.; Revin, D. G.; Гапонова, Д. М.

doi:10.1016/s0168-583x(00)00457-2

Cited by 32 publications

(15 citation statements)

References 8 publications

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“…Other studies of the same system include 150 keV P ion irradiation followed by annealing at 100°C, 649 which was reported to enhance the PL intensity without a significant shift in the emission peak position. A special variation of the theme was postimplanting of Si NCs with 100 keV Si ions ͑the same energy that was used in the synthesis of the crystals͒, thus leading to energy and ion deposition at exactly the same depth as the NC layer.…”

Section: Si and Ge Ncs In Silicamentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

934

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: Si and Ge Ncs In Silicamentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

934

591

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“…Integration of these two different problems is interesting in terms of modification of electron and optical properties of silicon quantum dots by their doping with shallow impurities. [4][5][6][7][8][9] Investigations of the spatial charge distribution in a quantum dot with impurity, 10 formation of impurity centers inside silicon nanocrystals from the energy point of view, 11 intervalley scattering, 12 hyperfine splitting and optical gap, 13 and screening of the point-charge field [14][15][16][17][18][19][20] have been performed in the past years. No doubt, these investigations contributed to more thorough understanding of the properties of the system nanocrystalline Si + impurity.…”

Section: Introductionmentioning

confidence: 99%

Valley-orbit splitting in doped nanocrystalline silicon:k∙pcalculations

Belyakov

Бурдов

2007

Phys. Rev. B

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The valley-orbit splitting in silicon quantum dots with shallow donors has been theoretically studied. In particular, the chemical-shift calculation was carried out within the frames of k · p approximation for singleand many-donor cases. For both cases, the great value of the chemical shift has been obtained compared to its bulk value. Such increase of the chemical shift becomes possible due to the quantum confinement effect in a dot. It is shown for the single-donor case that the level splitting and chemical shift strongly depend on the dot radius and donor position inside the nanocrystal. In the many-donor case, the chemical shift is almost proportional to the number of donors.

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“…With growth of the dose, the F magnitude increases. In [6,7], the model is suggested according to which the IPL enhancement at the phosphorus doping is connected with the action of two mechanisms: the passivation of the disrupted bonds (hence, the decrease of the nonradiative recombination rate) and the appearance of additional electrons in the conductivity band of QD. In our case, unlike [5], the decrease of the IPL at the high P concentration is not observed.…”

Section: Resultsmentioning

confidence: 99%

“…These factors are sensitive to the conditions of the ion implantation (ion energy and dose), the conditions of the annealing (temperature and time), and also the presence of the impurities. In [6,7] was shown that for a fixed annealing temperature T•n -10000 C (the annealing time, t-, = 2 hours), IPL can be adjusted by the choice of a dose. At that, the sizes of NI practically do not vary, and their density grows.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO₂:nc-Si

et al. 2001

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The results of an experimental research of the dependence of photoluminescence (PL) intensity in region about 800 nm for silicon nanoinclusions (quantum dots) obtained by Si ion implantation in Si0 2 on the dose of Si ions at two temperatures of an annealing Tan = 1000 and 11000 C are presented. It is established that in both cases the dependences have the shape of the curves with a maximum. For 11000 C the maximum is shifted to the lower dose. The influence of an additional ion doping by the phosphorus on intensity of PL is investigated depending on the dose (concentration) of P and the dose of the silicon at T., = 10000 C. It is shown, that in all the investigated region of P doses, the presence of P enhances the PL. The degree of the enhancement increases with the P dose, but the rate of the intensity enhancement goes down. With the growth of Si dose at the constant dose of P, the degree of the enhancement decreases. In an approximation of an effective mass, the energy spectra of a quantum dot are calculated at the presence of one or several P atoms for various their arrangement.

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The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

Cited by 32 publications

References 8 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Valley-orbit splitting in doped nanocrystalline silicon:k∙pcalculations

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO₂:nc-Si

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The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

Cited by 32 publications

References 8 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Valley-orbit splitting in doped nanocrystalline silicon:k∙pcalculations

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

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The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO₂:nc-Si