Abstract:The results of an experimental research of the dependence of photoluminescence (PL) intensity in region about 800 nm for silicon nanoinclusions (quantum dots) obtained by Si ion implantation in Si0 2 on the dose of Si ions at two temperatures of an annealing Tan = 1000 and 11000 C are presented. It is established that in both cases the dependences have the shape of the curves with a maximum. For 11000 C the maximum is shifted to the lower dose. The influence of an additional ion doping by the phosphorus on int… Show more
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