The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system

Spatial distribution of light-emitting centers in Si-implanted SiO2

“…Since the peak position of the emissions at $775 and $900 nm remained unchanged with the annealing time these peaks might have resulted from transitions other than the electron-hole recombination within the nanocrystal. Transitions taking place at the nanocrystal/ SiO 2 interface, which have been discussed in the scientific literatures recently [12,15], might be the source of these emission peaks.…”

“…The peak seen at $600 nm has been attributed to radiative defects such as the nonbridging oxygen hole center [5] or to defects such as clusters or chain of Si [8]. The effect of post-processing such as annealing under hydrogen or doping by B and P have been used to understand the possible emission mechanisms for both red and infrared emissions [7,9,10,15]. However, the location of the centers producing luminescence within the implanted region is not identified.…”

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

“…Of course, this value (2 nm) is no more than the estimate of the diameter from below, because it does not include the contribution to the photoelec tron line from the Si 2+ and Si 3+ ions, which are bound with oxygen and do not come into contact with surface atoms of the silicon nanocrystals. Taking this circum stance into account, the obtained value of the average size of the silicon nanocrystals is quite reasonable, as judged from the published data [8][9][10]21]. A similar analysis of the dimensions for carbon precipitates and silicon carbide nanoinclusions is difficult to perform, because it is necessary to consider a multicomponent system (Si-Si, C-C, Si-C, Si-O, C-OSi) with uncertain relationships between chemical compounds inside the precipitates and on their surface.…”

“…Taking into account the obtained data on the distri bution of the chemical composition, it can be argued that, in the layers located on both sides of the layer containing carbon, there occurs the formation of sili con nanoinclusions similar to those synthesized dur ing the high temperature annealing of the films of sil icon dioxide SiO 2 after their implantation with Si + ions [8][9][10]. In addition to the SiO 2 phase, these layers also contain silicon in chemical states of SiO y (y < 2).…”

“…Annealing after the implantation was carried out in a nitrogen atmosphere for 2 h at a temperature of 1100°C. The annealing regime is close to optimum in the formation of light emitting silicon nanocrystals through the implantation of Si + ions into SiO 2 [8][9][10].…”