Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

Abstract

The chemical and phase compositions of silicon oxide films with self assembled nanoclusters pre pared by ion implantation of carbon into SiO x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X ray photoelectron spectroscopy in combination with depth pro filing by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO 2 and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO 2 phase, contains silicon oxide species Si 2+ and Si 3+ with stoichiometric formulas SiO and Si 2 O 3 , respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ~2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.

Use of powder silicon as a photocurable resin filler for laser stereolithography and prospects for transforming stereolithographic parts with silicon from polymeric to ceramic ones.

“…Since there is no polymer -a source of carbon -left in the sample at this point, the formation of silicon carboxide compounds takes place due to the reaction of silicon carbide with silicon oxide, as the reaction of silicon carbide with oxygen leads to the formation of silicon oxide and carbon dioxide only. In other words, a chain of Si-O-C-Si is being formed here [23].…”

X-ray absorption near-edge structure anomalous behaviour in structures with buried layers containing silicon nanocrystals

“…Si + SiO 2 under high-temperature annealing (Belov et al, 2010). By means of the X-ray photoelectron spectroscopy (XPS) technique it was found (Boryakov et al, 2012; that silicon atoms with Si 2p core-level bindingenergy values close to crystalline SiC (100.8 eV; Dufour & Rochet, 1997) were located over the 70-170 nm surface layers of investigated samples. However, the absence of a sharp SiC peak in the XPS data mentioned above as well as the presence of low oxidation degree oxides at the same depth with silicon binding energies of $ 100.5-101.2 eV (Himpsel et al, 1988) argues against the proposition of silicon carbide formation.…”

“…The luminescent band shift to short wavelengths, overlapping the whole visible range, can extend applications possibilities of silicon structures for different optoelectronics devices. It has been shown (see, for example, Zhao et al, 1998;Gonzalez-Varona et al, 2000;Perez-Rodriguez et al, 2003;Tetelbaum et al, 2009;Boryakov et al, 2012) that simultaneous implantation of silicon and carbon ions into SiO 2 films leads to photoluminescence in the range from near infra-red to ultraviolet wavelengths due to the formation of silicon nanocrystals as well as carbon and silicon carbide nanocrystals. The luminescence extension to the visible and ultraviolet spectral range was realised by carbon ion implantation into SiO x films on silicon substrates where the nanocrystalline silicon phase was formed as the non-stoichiometric oxide decomposition SiO x !…”

The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

“…Recently, the possibility of obtaining semiconductor structures with self-organized nanoclusters using methods of molecular-beam epitaxy [1,2], ion implantation [3,4] and under the action of laser irradiation [5,6], as well as the ability to control their physical properties, have become the subject of intense research. In particular, laser-induced periodic surface nanostructures can be generated practically on any material (metals, semiconductors, dielectrics) at linearly polarized irradiation and are formed in a wide range of intervals of impulses, ranging from continuous wave radiation to several femtoseconds [7][8][9][10].…”