The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE

Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition method

“…Incorporation of Mg in GaN significantly depends on the stoichiometry of the growth surface. 15 Mg concentration in GaN increases with an increase of the number of Ga vacancies because the Mg is incorporated into substitutional Ga sites. 16 Similarly, in the growth of ͑Ga,Mn͒N nanowires, Mn ions can also occupy at Ga vacancies, 1 resulting in the increase of Mn concentration, as shown in Mn 2p spectra of Fig.…”

OMVPE growth of P-type GaN using solution Cp2Mg

“…Many studies have been done to optimize these growth parameters and to OMVPE Growth of P-type GaN Using Solution Cp 2 Mg achieve high-hole concentrations. [4][5][6][7] Up to now, hole concentrations up to the low 10 18 /cm 3 and resistivity below 1 ohm-cm can be obtained with optimized growth conditions. Cp 2 Mg is a white crystalline solid with very low vapor pressure.…”

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

“…2a, the concentrations of Mg and H are almost equal, this inevitably results in a nearly complete neutralization of Mg acceptors. Thus, post-growth treatments are necessary to release H from GaN grown by MOCVD [2][3][4][5]. With H 2 -free carrier gas as in Fig.…”

“…The values of Q and µ 0 (ijk) − or + in the Mg-doped GaN calculated by Van de Walle and Neugebauer [1,6] were used as start values to fit the experimental data. The formation energies of 12 related species of Mg − Ga , H + and Mg − -N-H + were optimized using the experimental data [2,3]. For other species, the formation energies were obtained by two ways: (1) deduced from the results of the first-principles calculations [1,6] comparing with the optimized values of Mg − Ga , H + and Mg − -N-H + ; (2) derived from the reciprocal reactions [9] for those without the first-principles calculation results.…”

“…One challenge is to increase p-type conductivity. Much work has been conducted to optimize the growth and post-treatment processes to improve the doping efficiency of Mg in GaN [1][2][3][4][5]. In general, the low doping efficiency of Mg was attributed to the high ionization energy of Mg in GaN (∼160 meV) and the compensation by native point defects and impurities [1,2].…”