The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

Protasov, D. Yu.; Журавлев, К. С.

doi:10.1016/j.sse.2016.12.013

Cited by 32 publications

(15 citation statements)

References 34 publications

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“…Simplified band diagrams modelling by two back-to-back capacitors. Unlike homogeneous bulkdoped materials, where the electrons and ionized donors appear in the same spatial location, for Si-δ-doped heterojunction QW the electrons are transferred to the QW region while the ionized donors remain in the δ-doped layers [11][12][13][14][15][16][17][18][19] . Because of the separation of charges, a model consisted of two back-to-back capacitors was chosen to calculate the internal transverse electric field (F) and electric potential difference ΔV across the space layer.…”

Section: Resultsmentioning

confidence: 99%

“…Because of the separation of charges, a model consisted of two back-to-back capacitors was chosen to calculate the internal transverse electric field ( F ) and electric potential difference Δ V across the space layer. Furthermore, a symmetric band diagram was assumed for simplicity for a dual and symmetric δ-doped layers 17 – 19 as depicted in Fig. 5 a.…”

Section: Resultsmentioning

confidence: 99%

“…As compared to the single Si-δ-doping, the dual and symmetric Si-δ-doping (modulation doping with two planes of Si evenly separating into two sides of the active channel with appropriate t S , see Fig. 1 ) can afford nearly a similar electron concentration in the active channel with low induced internal electric field due to the symmetric distribution of Si-δ-dopants and hence provide an even higher μ n due to the further reduction of scattering effects 17 – 19 .

Figure 1 ( a ) Cross-sectional view of the Si-δ-doped QW structure adopted in this work.…”

Section: Introductionmentioning

confidence: 99%

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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/ InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (t S = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n 2D (T)] was observed for t S = 10 and 15 nm but not for t S = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough t S (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of "modulation doping" and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n 2D , and hence no hysteresis curve was observed. Finally, effects from t S on the T-dependence of electron mobility in active QW channel are also discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Figure 1 ( a ) Cross-sectional view of the Si-δ-doped QW structure adopted in this work.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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“…Для улучшения характеристик СВЧ транзисторов оптимальные составы этих структур регулярно корректируется [1,2]. Для достижения определяемых конструкцией pHEMT-структуры электрофизических параметров требуется получать эпитаксиальные слои высокой степени кристалличности и точности элементного состава, поэтому разработка методов экспресс контроля состояния установок МОС-гидридной эпитаксии представляет существенный интерес.…”

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Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures.

Zmanovsky¹,

Il’yushina²,

Abdulov³

et al. 2019

JRE

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Аннотация. В настоящей работе посредством вторичной ионной массспектрометрии изучается распределение атомов кремния в AlGaAs/InGaAs/GaAs pHEMT-структурах с фоновым легированием, выращенных по технологии МОС-гидридной эпитаксии. Проведен сравнительный анализ C-V характеристик таких структур, с помощью электронной оже-спектроскопии изучено взаимодействие SiH 4 c поверхностью GaAs(001). Ключевые слова: вторичная ионная масс-спектрометрия, эпитаксия, pHEMTструктура.

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“…Возрастание связано с увеличением импульса Ферми (аналогично HEMT КЯ AlGaAs/GaAs). Уменьшение τ q и τ t сопровождается снижением отношения τ t /τ q , что означает увеличение вклада рассеяния электронов на удаленной ионизированной примеси на большие углы[9,10]. Эффективная глубина Зависимости эффективной массы электронов (a) и квантового (квадраты) и транспортного (треугольники) времен релаксации (b) от холловской концентрации.…”

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Эффективная масса и время релаксации импульса электронов в односторонне delta-легированных PHEMT квантовых ямах AlGaAs/InGaAs/GaAs с высокой электронной плотностью

Safonov¹,

Виниченко²,

Каргин³

et al. 2018

Письма В Журнал Технической Физики

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Using the Shubnikov–de Haas effect, the dependences of electron effective mass m * and transport and quantum momentum relaxation times in Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs pseudomorphic quantum wells with one-sided silicon δ-doping on the electron density in the range of (1.1–2.6) × 1012 cm^–2 have been established. Nonparabolicity coefficient m * in the linear approximation was found to be 0.133 m _0/eV. Both the transport and quantum momentum relaxation times depend nonmonotonically on Hall electron density nH, which is related to the competition between growth mechanisms of the Fermi momentum and the increasing contribution of large-angle scattering with increasing donor concentration.

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The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

Cited by 32 publications

References 34 publications

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures.

Эффективная масса и время релаксации импульса электронов в односторонне delta-легированных PHEMT квантовых ямах AlGaAs/InGaAs/GaAs с высокой электронной плотностью

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