The influence of gamma and X-radiation on pre-breakdown currents and resistance of commercial gas filled surge arresters

Lončar, B.; Stankovic, J Srboljub; Vasić, Ivana; Osmokrović, P.

doi:10.2298/ntrp0501059l

Cited by 9 publications

(3 citation statements)

References 5 publications

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“…In the previous investigations there was tested the influence of ionizing radiation, temperature, and aging on the following components for over-voltage protection: over-voltage diodes [4], gas-filled surge arresters [5][6][7] and polycarbonate capacitors [8]. The aim of this paper is to investigate the influence of radiation exposure, temperature variation, and aging on MOV characteristics.…”

Section: Introductionmentioning

confidence: 99%

Stability of Metal-Oxide Varistor Characteristics in Exploitation Conditions

et al. 2009

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Wide-spread use of metal-oxide varistors for non-linearity over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in various exploitation environments. The influences of temperature variation, aging and radiation exposure on metal-oxide varistors characteristics were investigated in this paper. Stable and effective over-voltage protection over a wide temperature range is always a desirable property, one which significantly contributes to overall system reliability. Behaviour of metal-oxide varistors in the temperature range from −50• C was investigated. Aging caused by exploitation was investigated by applying 1000 consecutive double exponential over-voltage pulses to the varistors. Resistance of metal-oxide varistors to the radiation is of special interest in nuclear, military, and space technology. Radiation effects of californium-252 combined neutron/gamma radiation were examined. Voltage-current characteristics, voltage-resistance characteristics and the value of breakdown voltage were used to characterize metal-oxide varistors operation. Non-linearity coefficient, defined from the voltage-current curve, was also used as a parameter. Results are presented with the accompanying theoretical interpretations of the observed changes in metal-oxide varistors behaviour.

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Section: Introductionmentioning

confidence: 99%

Stability of Metal-Oxide Varistor Characteristics in Exploitation Conditions

et al. 2009

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“…The main disadvantage of linear over-voltage protection components is the frequency dependent protection efficiency. For all non-linear protective devices this is only a marginal problem -only at high frequencies may the protection efficiency of these devices suffer certain degradation (Lončar et al, 2005). Reliable operation of all electronic components (including over-voltage protection) at high temperatures is extremely important -particularly in a "mission critical" application.…”

Section: Radiation Hardness Of Over-voltage Protection Components 31 Theorymentioning

confidence: 99%

Micro Electronic and Mechanical Systems

Takahata¹

2009

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and 2005, respectively. He held industrial research positions with Panasonic in Japan and 3M in USA, conducting R&D of micro devices and fabrication technologies for over ten years. Presently, he is an Assistant Professor at the University of British Columbia, Canada, as well as a Canada Research Chair. Prof. Takahata has published many papers and holds several issued patents in MEMS and micro/nanofabrication. He has served on committees for international conferences such as the IEEE MEMS and the IEEE Transducers. He also served as the editor of an InTech book Micro Electronic and Mechanical Systems. His research interests are in the areas of MEMS, nanotechnology, and micro/nanomanufacturing, including wireless microdevices, bioMEMS, nanomaterials and microstructures integration, and microplasma control and application. PrefaceThe miniaturization and performance improvement in semiconductor devices and integrated circuits (ICs) are expected to continue through leveraging of nanotechnologies and nanomaterials. This evolution should accelerate the System-on-a-Chip (SoC) trend, i.e., singlechip integration of multifunctional, mixed-signal electronic components, toward realizing embedded nanoelectronic systems. In parallel with advances in electronics, we are witnessing the rise of micro-electro-mechanical systems (MEMS), with rapidly growing commercial opportunities and markets extending to a broader range of industrial sectors on a global scale.The emergence of MEMS is primarily attributed to the establishment of sophisticated IC manufacturing techniques and processes that served as a foundation for realizing many innovative silicon-based micromachining technologies. Advances in this area have brought about a revolution in mechanical engineering, enabling the miniaturization and system-level integration of mechanical structures and devices with ICs on a chip for MEMS fabrication. With miniaturized sensors and actuators, MEMS provide us with the ability to interact with micro-scale environments with non-electrical/-electronic parameters, found in the mechanical, optical, chemical, biological, and other domains. This exceptional ability has led to their application in fields ranging from implantable medical sensors to video game controllers. There is no doubt that continued development of MEMS and microsystems with electromechanical functionalities will extend their contribution to society, in parallel with the evolution of IC technologies.This book discusses key aspects of these technology areas, organized in twenty-seven chapters that present the latest research developments in micro electronic and mechanical systems. The book addresses a wide range of fundamental and practical issues related to MEMS, advanced metal-oxide-semiconductor (MOS) and complementary MOS (CMOS) devices, SoC technology, integrated circuit testing and verification, and other important topics in the field. Several chapters cover state-of-the-art microfabrication techniques and materials as enabling technologies for the microsystems. Reliabili...

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“…Research on the gas discharge at low pressures is very important for the gas practical applications [1][2][3][4][5]. The influence of the particles remaining from the previous discharge on the current discharge represents the memory effect that is essential for gas discharge processes [6].…”

Section: Introductionmentioning

confidence: 99%

A system for gas electrical breakdown time delay measurements based on a microcontroller

Todorović¹,

Vasovic²,

Ristić³

2011

Meas. Sci. Technol.

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A new system, called gasmem v1.0, for the measurements of gas electrical breakdown time delay (td), with significantly better characteristics than older systems, has been developed and realized. It is based on the PIC 18F4550 microcontroller and could measure the minimal td of about 1.5 μs with the resolution of 83.33 ns. The relaxation (afterglow) period (τ) could vary from 1 to 232 ms (≈50 days). The successive series of td measurements with various τ could be performed, giving very reliable td data that are stored on the personal computer (PC) hard drive via the USB interface. The td and τ values enable the drawing of memory curves (⟨td⟩ = f(τ)) and the analysis of memory effects in the gases. The randomness of td values measured by the gasmem system for more τ values was tested using the nonparametric Wald–Wolfowitz test showing the stochastic nature of obtained results. The memory curves obtained by this system have shown very high reproducibility. In addition, the system has a capability of operating as a stand-alone system (independently of a PC), with the possibility for the implementation of a touch screen for controlling the system and additional memory (e.g. memory card) for data storage.

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The influence of gamma and X-radiation on pre-breakdown currents and resistance of commercial gas filled surge arresters

Cited by 9 publications

References 5 publications

Stability of Metal-Oxide Varistor Characteristics in Exploitation Conditions

Stability of Metal-Oxide Varistor Characteristics in Exploitation Conditions

Micro Electronic and Mechanical Systems

A system for gas electrical breakdown time delay measurements based on a microcontroller

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