The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Radiation-induced changes on poly(methyl methacrylate) (PMMA)/lead oxide (PbO) composite nanostructure

“…However, the viewed irradiated curves display no change due to the doses of 30 and 60 kGy, and thus these two curves overlap. The influence of gamma-irradiation has already been tested on the HfTiSiO(N) and HfTiO(N) MIS structures, where the analysis of its C-V curves shows a parallel shift due to irradiation [37]. For the C-V plots, some experimental studies display the consistency with the thin-film composite structure synthesized by us.…”

Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

“…The positive flat-band shift along the voltage axis relative to that of fresh devices corresponding to negative oxide charges can come from either singly and doubly negatively charged interstitial oxygen atoms [33]. When the annealing temperature increasing to 400°C, negative flat-band shift corresponding to positive oxide charges was detected, which can be due to the breakdown of dangling bonds at the interface at high temperature [34,35]. The leakage current density versus gate voltage for samples annealed at different temperature as a function of gate voltage is demonstrated in Fig.…”

“…8. Using a mathematical iteration method, the electron effective mass and barrier height at the Al/HfTiON interface were extracted to be about 0.10 m 0 and 0.81 eV, respectively, which is little smaller than £ B (0.94 eV) between Al and HfO 2 due to the reduction of band energy by incorporating Ti and N [35,39]. When the positive voltage is applied in the Al top electrodes (under substrate injection), the current varies linearly with the oxide field (Ohmic type conduction), in the 0-0.5 MV/cm range, as shown in Fig.…”

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li3+ion-irradiated Ni/SiO2/Si MOS capacitors

“…The increase in tan δ is attributed to the decrease in the dielectric constant of the oxide with ion fluence (28). From the offline C-V measurements, the dielectric constant was found to reduce from ∼2.4 (for the device irradiated with 5 × 10 10 Li ions/cm 2 ) to 1.8 (for the device irradiated with 1 × 10 12 Li ions/cm 2 ).…”