The influence of electroless metallization process parameters on basic electric properties of Ni–P alloy

Pruszowski, Z.; Cież, M.

doi:10.1016/j.microrel.2013.08.018

Cited by 6 publications

(8 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in time of metallization comes from established optimum pH for electroless nickel plating (Pruszowski et al, 2009;Pruszowski et al, 2013).…”

Section: Research Resultsmentioning

confidence: 99%

“…Concentration of substrates was constant. The pH was stabilized by means of sodium citrate and succinate in such a way that the pH was in the range of 1.8-2.5, which is an optimum for process carried out in the acidic environment (Pruszowski et al, 2009;Pruszowski et al, 2013). Process was carried out for 60 minutes at 60°C with samples collection every 10 minutes.…”

Section: Microelectronics Internationalmentioning

confidence: 99%

See 1 more Smart Citation

Selective metallization of solar cells

Wróbel

Kowalik

Mazurkiewicz

2015

Microelectronics International

View full text Add to dashboard Cite

Purpose -This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform low-cost contacts in any form. Design/methodology/approach -The study used a multi-and monocrystalline silicon plates. On the surface of the plates, the contact by the electroless metallization was made. After metallization stage, annealing process in a temperature range of 100-700°C was conducted to obtain ohmic contact in a semiconductor material. Subsequently, the electrical parameters of obtained structures were measured. Therefore, trial soldering was made, which demonstrated that the layer is fully soldered. Findings -Optimal parameters of the metallization bath was specified. The equations RS ϭ f (metallization time), RS ϭ f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: masking, selective activation and nickel-plating of activated plate. Such obtained metal layers have great variety in application and, in particular, can be used for the preparation of electric terminals in silicon solar cell. Originality/value -The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.

show abstract

“…The increase in time of metallization comes from established optimum pH for electroless nickel plating (Pruszowski et al, 2009;Pruszowski et al, 2013).…”

Section: Research Resultsmentioning

confidence: 99%

Section: Microelectronics Internationalmentioning

confidence: 99%

Selective metallization of solar cells

Wróbel

Kowalik

Mazurkiewicz

2015

Microelectronics International

View full text Add to dashboard Cite

show abstract

“…The electroless deposition of a resistive Ni-P layer is the subject of the currently conducted research (Kowalik et al , 2014; Pruszowski and Ciez, 2014; Pruszowski et al , 2009, 2011; Pruszowski and Kowalik, 2010). Due to their properties, especially low resistivity, they will be used in the manufacture of low resistance resistors as well as in the technology of manufacturing conductive electrodes of photovoltaic cells (Wrobel et al , 2015; Kowalik et al , 2016), where an emitter layer can be made using low-cost production processes (Drabczyk et al , 2016; Panek et al , 2003, 2009).…”

Section: Introductionmentioning

confidence: 99%

Relationship between resistance, TCR and stabilization temperature of amorphous Ni-P alloy

Filipowski

Pruszowski

Waczyński

et al. 2017

View full text Add to dashboard Cite

Purpose The paper aims to present a research on the impact of the stabilization process of a thin metallic layer (Ni-P) produced on a ceramic surface (Al2O3) by means of electroless metallization on its electric parameters and structure. On the basis of the research conducted, the existence of a relationship between resistance (R) and the temperature coefficient of resistance (TCR) of the test structure with a Ni-P alloy-based layer and the temperature of stabilization was proposed. Design/methodology/approach Metallic Ni-P layers were deposited on sensitized and activated substrates. Metallization was conducted in an aqueous solution containing two primary ingredients: sodium hypophosphite and nickel chloride. The concentration of both ingredients was (50-70) g/dm3. The process lasted 60 min, and the metallization bath pH was kept at 2.1-2.2, whereas the temperature was maintained at 363 K. The thermal stabilization process was conducted in different temperatures between 453 and 623 K. After the technological processes, the resistance and TCR of the test structures were measured with a micro ohmmeter. The composition and the morphology of the resistive layer of the structures examined was also determined. Findings The dependence of the resistance on the temperature of the stabilization process for the temperature range 553 to 623 K was described using mathematical relationships. The TCR of test resistors at the same thermal stabilization temperature range was also described using a mathematical equation. The measurements show that the resistive layer contains 82.01 at.% of nickel (Ni) and 17.99 at.% of phosphorus (P). Originality/value The results associate a surface morphology Ni-P alloy with the resistance and TCR according to temperature stabilization. The paper presents mathematical relationships that have not been described in the literature available.

show abstract

“…Ni-based UBM has been intensely investigated as a diffusion barrier between Sn and Cu, including electroless nickel immersion gold (ENIG), electroplated Ni-P, Ni-Cu-P, and Ni-Zn-P [14][15][16][17][18][19][20][21][22][23][24][25]. During soldering with Ni-based UBM, the formation of columnar Ni 3 P accelerates interfacial reaction, and voids appear in Ni 3 P. Due to the voids, the interface is weakened and reliability of solder joints is degraded [14,16,17,25].…”

Section: Introductionmentioning

confidence: 99%

“…During soldering with Ni-based UBM, the formation of columnar Ni 3 P accelerates interfacial reaction, and voids appear in Ni 3 P. Due to the voids, the interface is weakened and reliability of solder joints is degraded [14,16,17,25]. Therefore, the interfacial reaction between solders and UBM needs to be suppressed.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and morphology of interfacial intermetallic compound CoSn3 in Sn–Pb/Co–P solder joints

Yang

2015

Microelectronics Reliability

View full text Add to dashboard Cite

The influence of electroless metallization process parameters on basic electric properties of Ni–P alloy

Cited by 6 publications

References 14 publications

Selective metallization of solar cells

Selective metallization of solar cells

Relationship between resistance, TCR and stabilization temperature of amorphous Ni-P alloy

Microstructure and morphology of interfacial intermetallic compound CoSn3 in Sn–Pb/Co–P solder joints

Contact Info

Product

Resources

About