Selective metallization of solar cells

Abstract

Purpose -This paper aims to present the possibility of the technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform low-cost contacts in any form. Design/methodology/approach -The study used a multi-and monocrystalline silicon plates. On the surface of the plates, the contact by the electroless metallization was made. After metallization stage, annealing process in a temperature range of 100-700°C was conducted to obtain ohmic contact in a semiconductor material. Subsequently, the electrical parameters of obtained structures were measured. Therefore, trial soldering was made, which demonstrated that the layer is fully soldered. Findings -Optimal parameters of the metallization bath was specified. The equations RS ϭ f (metallization time), RS ϭ f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: masking, selective activation and nickel-plating of activated plate. Such obtained metal layers have great variety in application and, in particular, can be used for the preparation of electric terminals in silicon solar cell. Originality/value -The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.

Selective metallization of silicon and ceramic substrates

“…For testing purposes, a structure consisting of straight, 100-µm-wide paths was chosen. The commonly available POSITIV 20 emulsion manufactured by Kontakt Chemie was used as the photosensitive emulsion (Wróbel et al , 2015). The process was conducted in a manner typical for photochemical preparation of printed circuits.…”

“…The process of Ni–P deposition consisted of the following stages (Wróbel et al , 2015; Kowalik et al , 2016): Sensitization : It is the introduction to the proper activation which enables formation of homogeneous catalytic layer. An aqueous solution of SnCl 2 at a concentration of 0.5 g/ml was used at this stage. Activation : The purpose of this stage is to create the catalytic layer on the treated surface, which is responsible for initiating the chemical-metallization process.…”

“…Currently, the Ni–P layers are used not only as resistive layers but also for production of electrodes in photovoltaic structures (Park et al , 2007; Kim and Lee, 2013; Lee et al , 2012; Min and Lee, 2013; Min et al , 2013). The authors have contributed to the research by developing the method of selective metallization of silicon (Si) substrates for the purpose of depositing collecting electrodes in a photovoltaic structure (Wróbel et al , 2015; Kowalik et al , 2016).…”

Relationship between resistance, TCR and stabilization temperature of amorphous Ni-P alloy

“…These layers were formed on ceramic surfaces by means of chemical metallization. They can also be deposited on silicon wafers (Wrobel et al , 2015; Kowalik et al , 2016). Changes in the characteristics of the Ni-P layer were controlled by registering the change of resistance (R) of test resistors and the change in their TCR.…”

“…The electroless deposition of a resistive Ni-P layer is the subject of the currently conducted research (Kowalik et al , 2014; Pruszowski and Ciez, 2014; Pruszowski et al , 2009, 2011; Pruszowski and Kowalik, 2010). Due to their properties, especially low resistivity, they will be used in the manufacture of low resistance resistors as well as in the technology of manufacturing conductive electrodes of photovoltaic cells (Wrobel et al , 2015; Kowalik et al , 2016), where an emitter layer can be made using low-cost production processes (Drabczyk et al , 2016; Panek et al , 2003, 2009).…”