Selective metallization of silicon and ceramic substrates

Abstract

Purpose The purpose of this paper is to present the possibility of technology of chemical metallization for the production of electrodes and resistors based on Ni–P alloy on silicon (Si), alundum (Al2O3) and low temperature cofired ceramic (LTCC) substrates. The developed technology provides low cost in any form. Design/methodology/approach During the study monocrystalline Si plates and Al2O3 and LTCC substrates were used. On the surface of the substrates, the electrodes (resistors) by the electroless metallization were made. Subsequently, the electrical parameters of obtained structures were measured. Afterwards, trial soldering was made to demonstrate that the layer is fully soldered. Findings Optimal parameters of the metallization bath were specified. As a result of the research conducted, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated Si plate and Al2O3 and LTCC substrates comprises the following technology: masking, selective activation, nickel-plating of activated plate. Such obtained metal layers have a great variety of application; in particular they can be used for the preparation of electric contacts in Si solar cells, production of electrodes and resistors and production of electrodes in thermoelectric structures. Originality/value The paper presents a new, unpublished method of manufacturing electrodes (resistors) on Si plate and Al2O3 and LTCC substrates.

Computer‐aided selective production of low-resistance NiP and NiCuP layers

“…A similar type of structure can be found in the case of other publications using metallization processes (Bernasconi et al, 2020) (Figure 4). The images obtained are analogous to the results from the previous studies (Kowalik et al, 2019;Kowalik et al, 2016;Wr obel et al, 2015;Kowalik et al, 2014) (Figure 5). The course of the actual metallization process, made on the basis of technological parameters generated by the mathematical model, with its model is compared below.…”

“…for resistive layers: Rs = 1. The time of the metallization process, equal to 60 min, is favorable when comparing the results with those previously published by the authors (Kowalik et al, 2019;Kowalik et al, 2016;Wr obel et al, 2015;Kowalik et al, 2014;Pruszowski et al, 2011;Pruszowski et al, 2010;Pruszowski et al, 2009). At the same time, it is the time that allows for the production of stable metallic layers (appropriate thickness, continuity and surface resistance) with parameters that enable their use in electronics.…”

“…The author's work concerning optimization of Ni-P and Ni-Cu-P resistive alloy production technology resulted in development of a mathematical model reflecting possible nickel plating process configurations. The processed technological data of the process, published in numerous articles (Kowalik et al, 2019;Kowalik et al, 2016;Wr obel et al, 2015;Kowalik et al, 2014;Pruszowski et al, 2010;Pruszowski and Kowalik, 2010;Pruszowski et al, 2009), was used as a basis for a computer program developed in the Matlab environment. The program is designed to enable convenient and efficient determination of parameters of the technological process of chemical metallization of Ni-P and Ni-Cu-P layers.…”