The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

Abstract

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications

“…For electrical characterization, were deposited by thermal evaporation, aluminium contacts (~100 nm in thickness) with different areas to have metalinsulator-metal (MIM). The structure of MIM was presented in an older work of author [3,5,9] The intensity-voltage (I-V), capacitance-voltage (C-V), were measured using an Agilent 4156 and HP 4277A Analysers, at 1 MHz, from Agilent Technologies.…”

“…Based on the sol-gel reaction of SiO2 and ZrO2 nanoparticles in PMMA matrix were obtained thin layes for gate dielectrics. The dielectric constant values of 2.1, 3.4 and 5.4 have been obtained for PMMA, ZrO2-PMMA and SiO2-PMMA films, respectively [9]. Thermal silicon dioxide (SiO2, 100 nm) was used as gate insulator [10] and ITO Sourse/Drain electrode (100 nm) was deposited using reactive sputter.…”

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

“…The 30 nm ZATO film was prepared as the active layer at 3 mTorr and 5% oxygen content by radio frequency (RF) magnetron sputtering. The 200 nm Al electrodes [36,37] were prepared on the active layer as the S/D after the films were annealed at 523 K, 573 K, 623 K and 673 K. The TFT devices with the ZATO films as the active layer were successfully prepared in this way. The electrical characteristics of the TFTs at different annealing temperatures were measured using a semiconductor analyzer (Aglient 4155C, Dongguan nuozhan electronic instrument Co. Ltd., Dongguan, China) in dark and air environments, and the output and transfer characteristics for the 523 K annealing, 573 K annealing, 623 K annealing and 673 K annealing devices are shown in Figure 8a-d.…”