The Influence of Dopant Concentration on the Oxidation of N-Type GaAs in H[sub 2]O

Schwartz, B.; Haszko, S. E.; Wonsidler, D. R.

doi:10.1149/1.2408287

Cited by 17 publications

(5 citation statements)

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“…The refractive index, n, of the oxide was 1.8 in all cases. The oxide growth rate is sensitive to surface perfection and the oxidation is, in fact, a useful tool (7) to examine surfaces for scratches, compositional or doping inhomogeneity, occlusions, etc.…”

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confidence: 99%

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

Logan¹,

Schwartz²,

Sundburg³

1973

J. Electrochem. Soc.

100

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The characteristics of normalGaAs anodization at constant applied voltage, V, in a concentrated (30%) H2O2 electrolyte are examined in detail. Uniform oxides, with a refractive index of 1.8 and oxide thickness, t, proportional to V, are grown over the pH range 1–6. The pH can be adjusted by the addition of NH4OH or H3PO4 to the electrolyte but the presence of other common acids at concentrations of a few parts per million can transform the anodization process into an etching procedure. In 10 min anodizations at pH=2,18Aå;/V of oxide are grown and 12Aå/Vnormalof GaAs are consumed on chemically polished surfaces (for V≤225V ). The resistance of the electrolyte causes significant voltage drops in the electrolyte at all pH values and limits the initial current flow. Most of the oxide is grown during the initial anodization (typically in the first minute) where the current is decreasing rapidly with time and the voltage drop across the oxide is increasing. The oxide is insoluble in the HNO3 but is soluble in most other acids and bases. Limited MOS measurements yield a dielectric constant of 5.4 and a breakdown field of 3×106V/normalcm . The use of the oxide as a mask for chemical etching was demonstrated by forming passive optical waveguides in normalGaAlAs‐normalGaAs‐normalGaAlAs epitaxial layers.

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mentioning

confidence: 99%

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

Logan¹,

Schwartz²,

Sundburg³

1973

J. Electrochem. Soc.

100

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“…The GaAs wafers were immersed into the gallium-ion-contained nitric acid solution to form the oxidized layer. A high oxidation rate ( 1000Å/h) is relatively larger than that of the oxidation enhanced by boiling water ( 100Å for 5 h) [13]. From the analysis of X-ray photo electron spectroscopy (XPS), the oxide layers are found to be the composite of the Ga O , As, and As O [14].…”

Section: Methodsmentioning

confidence: 99%

A GaAs MOSFET with a liquid phase oxidized gate

Wang

et al. 1999

IEEE Electron Device Lett.

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Low leakage current density (as low as 10 08 A/cm 2 at an applied voltage of 5 V) and high breakdown electrical field (larger than 4.5 MV/cm) of the liquid phase chemical-enhanced oxidized GaAs insulating layer enable the application to the GaAs MOSFET. The oxide layer is found to the composite of Ga 2 O 3 , As, and As 2 O 3 . The n-channel depletion mode GaAs MOSFET's are demonstrated and the I I I-V V V curves with complete pinch-off and saturation characteristics can be seen. A transconductance larger than 30 mS/mm can be achieved which is even better than those of the MESFET's fabricated on the same wafer structure.Index Terms-Compount semiconductor GaAs, depletion mode, liquid phase oxidation, MOSFET.

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“…Chemical oxidation of GaAs in H 2 O 2 and H 2 O has been examined, 6,7) and the oxidation rates are extremely low (115Å and 850Å over 6 days in H 2 O 2 and H 2 O, respectively). Recently, extensive research has been conducted on method for the oxidation of GaAs.…”

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confidence: 99%

“…White with this method at 70 • C (∼1000Å for 1 h) is relatively higher than that obtained with the oxidation enhanced by boiling water (<100Å for 5 h). 7) In addition, it has been proved that the higher temperature results in a faster oxidation rate. Both the thickness and the refractive index of the oxide films increase nonlinearly with oxidation time especially at higher temperatures.…”

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confidence: 99%

Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature

Wang

Huang

Wang

et al. 1998

Jpn. J. Appl. Phys.

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A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40 • C-70 • C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAs without any extra energy source. A relatively high oxidation rate ( 1000Å/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga 2 O 3 and As 2 O 3 .

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The Influence of Dopant Concentration on the Oxidation of N-Type GaAs in H[sub 2]O

Abstract: not Available.

Cited by 17 publications

References 0 publications

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

A GaAs MOSFET with a liquid phase oxidized gate

Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature

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