A GaAs MOSFET with a liquid phase oxidized gate

Lin

Applied Physics Letters

et al. 2010

The metal-oxide-semiconductor metamorphic high-electron-mobility transistor ͑MOS-MHEMT͒ with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain.

mentioning

confidence: 99%

Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Lin

Applied Physics Letters

et al. 2010

“…Recently, a liquid phase chemical enhanced oxidation (LPCEO) method has been successfully developed and utilized in GaAs-related MOS application [1]. The GaAs native oxide is formed by applying the heated gallium-ion-containing nitric acid solution.…”

Section: Introductionmentioning

confidence: 99%

Pd/Oxide/InGaP MOS Schottky Hydrogen Sensor with Native Thin Oxide

Yarn

Lin

Chure

et al. 2007

SSP

Liquid phase deposition (LPD) grown InGaP native oxide near room temperature (~60oC) is demonstrated and investigated for the first time. A high oxidation rate (~80nm/hr) is obtained and checked by SEM and AES. The oxide is determined to be composed of InPO4 and Ga2O3 which are analyzed by the results of XPS measurement. Due to the presence of excellent quality of InGaP native oxide, high hydrogen (H2) sensitivity in output current of Pd/oxide/InGaP MOS Schottky diode is observed. Under the applied voltage of -1V and 50ppm H2/air, a high sensitivity of 1090 is obtained. In addition, an obvious variation of output current and a short response time due to the exposure to different H2 concentration are also achieved.

“…Over the past few years, an alternative technique named liquid phase chemical-enhanced oxidation (LPCEO) on GaAs [8][9][10][11][12], AlGaAs [13,14], InGaP [15], InGaAs [16], InAlAs [16] and so on has been demonstrated. This is a stable, reliable, simple and low-temperature (30-70 • C) technique in growing uniform and smooth native oxide films.…”

Section: Introductionmentioning

confidence: 99%

Liquid phase oxidation for InGaP/GaAs HBT passivation

Sze

Semicond. Sci. Technol.

Huang

et al. 2006

Native oxide films grown near room temperature by liquid phase oxidation (LPO) on p + -GaAs, n-InGaAs and n-InGaP are investigated. Their applications to heterojunction bipolar transistors (HBTs) are also demonstrated and characterized. With the LPO as surface passivation, the dc current gain β of the HBT devices increases sevenfold in low collector current regimes, and it also shows wider collector regimes from 8.3 × 10 −11 A to 0.1 A. In addition, a larger breakdown voltage and lower surface recombination current can be obtained. This provides the possibility of promising implementations in low-power electronics and communication applications. Comparisons between devices with LPO passivation and those with sulfur treatment on the InGaP/GaAs HBTs are also discussed.