Abstract:Liquid phase deposition (LPD) grown InGaP native oxide near room temperature (~60oC) is
demonstrated and investigated for the first time. A high oxidation rate (~80nm/hr) is obtained and
checked by SEM and AES. The oxide is determined to be composed of InPO4 and Ga2O3 which are
analyzed by the results of XPS measurement. Due to the presence of excellent quality of InGaP
native oxide, high hydrogen (H2) sensitivity in output current of Pd/oxide/InGaP MOS Schottky
diode is observed. Under the applied voltage of … Show more
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