The influence of different species of gases on the luminescent and structural properties of pulsed laser-ablated Y2O2S:Eu3+ thin films

Abstract

Y 2 O 2 S:Eu 3? films have been grown on Si (100) substrates by using a pulsed laser deposition technique. The thin films grown under vacuum, argon and oxygen ambient have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. The crystallinity of the film deposited in vacuum is poor, but improved significantly in argon and oxygen atmosphere. Similarly, both scanning electron microscopy and atomic force microscopy confirmed that different species of gases affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the KubelkaMunk function was about 4.69 eV. The photoluminescence measurements indicated red emission of Y 2 O 2 S:Eu 3? thin films with the most intense peak appearing at 612 nm, which is assigned to the 5 D 0 -7 F 2 transition of Eu 3? . The intensities of this most intense peak greatly depend on the species of gas with argon having the highest peak. This phosphor has applications in the flat panel displays.

Karakteristik Sifat Optik Nanopartikel Karbon (Carbon Dots) Dengan Metode Uv-Vis DRS (Ultraviolet-Visible Diffuse Reflectance Spectroscopy)

“…Energi band gap yang semakin kecil dapat meningkatkan aktifitas CDs karena energi yang dibutuhkan untuk mengeksitasi elektron dari vita valensi ke pita konduksi lebih kecil. Absorpsi terhadap UV-Vis DRS dengan metode sintesis ablasi laser mengasilkan energi band gap sebesar 3.85 eV (Singh & Gopal, 2012) , 4.07 eV (Ali et al, 2016), 3.11 eV, 3.07 eV dan 3.02 eV (Siuzdak et al, 2014).…”

Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications

“…Nevertheless, several papers have demonstrated the successful use of Y 2 O 3 and Y 2 O 2 S in red and green electroluminescent devices using multilayer structures where ZnS is used as a carrier accelerating layer [19,20]. Y 2 O 3 :Eu thin film phosphors can be grown by various methods such as wet chemistry [21], laser vaporization [22], hydrothermal [23], microwave hydrothermal [24,25], chemical precipitation with calcination [26], co-precipitation [27], Pechini [28], sol-gel [29,30], and pulse laser deposition [31] methods. Atomic layer deposition (ALD) is a well-known method that allows the growth of uniform and dense films with well-controlled stoichiometry and high chemical stability.…”

“…Y 2 O 3 :Eu thin film phosphors can be grown by various methods such as wet chemistry [ 21 ], laser vaporization [ 22 ], hydrothermal [ 23 ], microwave hydrothermal [ 24 , 25 ], chemical precipitation with calcination [ 26 ], co-precipitation [ 27 ], Pechini [ 28 ], sol–gel [ 29 , 30 ], and pulse laser deposition [ 31 ] methods. Atomic layer deposition (ALD) is a well-known method that allows the growth of uniform and dense films with well-controlled stoichiometry and high chemical stability.…”