The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

Wang, X.B.; Song, Cheng; Li, D.M.; Geng, Kuiwei; Zeng, Fanhao; Pan, Feng

doi:10.1016/j.apsusc.2006.02.059

Cited by 102 publications

(47 citation statements)

References 34 publications

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“…The width of the inter-granular region is ∼ 5 nm in this film. This type of grain boundary is structurally similar to that recently observed in ZnO films [25].…”

Section: Methodssupporting

confidence: 69%

“…To reference the piezoelectric response to the piezoelectric material, the PE response on a bare single crystalline Si (100) substrate is also calculated. The piezoelectric constant d 33 is approximately 0.26 pm/V for the bare Si substrate, which is at a similar level (<0.5 pm/V) as the value in the reference literature [28,29]. As a result, the impact of initial substrate roughness on the PE result can be ignored.…”

Section: Resultssupporting

confidence: 49%

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Nano Size Related Piezoelectric Efficiency in a Large ZnO Thin Film, Potential for Self-Powered Medical Device Application

Li¹,

Gao²

2016

Biochem Anal Biochem

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Large-area piezoelectric ZnO films with different gran size has been synthesized by sol-gel technique using different annealing temperatures from 550 to 700°C. The piezoelectric efficiency (PE) of those deposited films is characterized by Piezoelectric Force Microscopy (PFM). All synthesized films exhibit a crystal structure. The width of the rock curve of [0002] characterized by x-ray diffraction decreases with the annealing temperature, suggesting a better c-axis orientated ZnO film formed at higher annealing temperature. The grain size of the grown films are found to continuously increase from 20 to 60 nm when the annealing temperatures increase from 550 to 700°C. The piezoelectric efficiency (PE, d 33 ) of the films exhibit strong grain size dependence, i.e., the PE initially increase with the annealing temperature and then decreasing with a further annealing temperature increased. The maximum PE value appears in the film annealed at 650°C. The peculiar piezoelectric properties (d 33 ) can be explained by the competing between the crystalline, which favors a larger d 33 due to the enhanced dipole polarization, and the grain size, which results in a piezoforce release at large grain size due to domain wall size and motion.

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“…The width of the inter-granular region is ∼ 5 nm in this film. This type of grain boundary is structurally similar to that recently observed in ZnO films [25].…”

Section: Methodssupporting

confidence: 69%

Section: Resultssupporting

confidence: 49%

Nano Size Related Piezoelectric Efficiency in a Large ZnO Thin Film, Potential for Self-Powered Medical Device Application

Li¹,

Gao²

2016

Biochem Anal Biochem

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“…Singh et al [14] have reported decrease in resistivity up to 2 mol % of Ni doping in bulk ZnO samples. Moreover, in a very recent communication, Wang et al reported enhancement of resistivity in Ni-doped ZnO deposited by magnetron sputtering technique [12].…”

Section: Introductionmentioning

confidence: 99%

“…Doping of Ni in ZnO matrix has been done by several techniques [10][11][12], however, effect on resistivity of ZnO on Ni doping is not well established so far. Films grown by rf magnetron sputtering were found to be insulating up to a Ni concentration of 20% [11].…”

Section: Introductionmentioning

confidence: 99%

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

et al. 2007

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Zinc oxide (ZnO) and Ni-doped zinc oxide (ZnO:Ni) films are prepared by atom beam sputtering with an intent of growing transparent conducting oxide (TCO) material and understanding its physical properties. The crystalline phases of the films are identified by the grazing angle X-ray diffraction (GAXRD) technique. Thicknesses of the films are measured by ellipsometry. Chemical states of the elements present in the films are investigated by X-ray photoelectron spectroscopy (XPS), which indicates the presence of Ni in the ZnO environment in a divalent state. Average transmission across the ZnO:Ni film was determined to be ∼ 83% in the visible region, which is less than that (∼ 90%) of undoped ZnO films. The resistivity measured by van der Pauw technique of the ZnO:Ni film (∼ 9 × 10 −3 Ω cm) is two orders of magnitude smaller as compared to its undoped counterpart (1 Ω cm). For ZnO:Ni film an average carrier concentration of ∼ 1.4 × 10 19 cm −3 was observed by Hall measurements. Two important mechanisms reported in the literature viz. influence of d-d transition bands and electron scattering from crystallites/grains are discussed as the possible causes for the increase in conductivity on Ni doping in ZnO.

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“…The piezoelectric coefficient, d 33 , can be deducted from the slope of the resulting amplitude of the displacement vs. applied voltage plot, which refer to both peak-to-peak values of displacement and applied voltage, respectively. The piezoelectric efficiency, d 33 , was calculated using the follow equation [32].…”

Section: Resultsmentioning

confidence: 99%

Piezoelectric Size Effects in a Zinc Oxide Micropillar

Qin

et al. 2015

Nanoscale Res Lett

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In this work, the dependence of piezoelectric coefficients (PE) on the size of artificial fabricated ZnO micropillars on Si substrate is investigated. ZnO full film is grown with c-axis orientation and an average grain size of 20 nm at a substrate temperature of 500°C by pulsed laser ablation. The micropillars with the size range of 1.5 to 7 μm are formed by top-down semiconductor device processing. The PE, characterized by piezoelectric force microscopy (PFM), is found to increase from 18.2 to 46.9 pm/V, when the ZnO pillar size is reduced from 7 to 1.5 μm. The strong PE dependence on ZnO pillar size can be explained by local changes in polarization and reduction of unit cell volume with respect to bulk values. These results have strong implications in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

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The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

Cited by 102 publications

References 34 publications

Nano Size Related Piezoelectric Efficiency in a Large ZnO Thin Film, Potential for Self-Powered Medical Device Application

Nano Size Related Piezoelectric Efficiency in a Large ZnO Thin Film, Potential for Self-Powered Medical Device Application

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

Piezoelectric Size Effects in a Zinc Oxide Micropillar

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