Abstract:AbslracL The Ni 2p and 0 Is XPS of NiO single crystals were measured using monochromatic Al K a radiation. Different treatmenu of the crystals allow us to give a description of the influence of defects on these spectra. The Ni 2p3p spectrum of in-sirucleaved NiO exibiu clearly visible features at 854.1 eV, 855.6 eV and 861 eV The intensity ratio changes after ion bombardment and an additional peak at 852.2 eV appears. ApaR from a slight increase in linewidth the 0 1s spectrum remains unchanged. The 0 Is spectr… Show more
“…At higher excitation energies the spectra are identical to that of Fe 3 O 4 , despite in particular for sample SN1 a weak Fe 3+ charge transfer satellite is also present at higher excitation energies indicating a small excess of trivalent ions at the interface between Fe 3 O 4 and NiO. 44 The corresponding Ni 2p spectra are overlapped by broad Fe 2s states (Figs. 2b and d).…”
“…At higher excitation energies the spectra are identical to that of Fe 3 O 4 , despite in particular for sample SN1 a weak Fe 3+ charge transfer satellite is also present at higher excitation energies indicating a small excess of trivalent ions at the interface between Fe 3 O 4 and NiO. 44 The corresponding Ni 2p spectra are overlapped by broad Fe 2s states (Figs. 2b and d).…”
“…Uhlenbrockt et al 26 investigated a pure NiO single crystal cleaved under UHV conditions and found that a perfect NiO surface exhibits the characteristic peak at 853.4 to 854.4 eV but also an additional shoulder at 855.6 eV which overlaps with the characteristic peak for Ni 2 O 3 and Ni(OH) 2 at 855.1 to 856.6 eV, 27-32 see gray areas in Figure 2. Therefore the Ni 2p spectra was fitted according to 33 with hydrogen terminated Figure 1.…”
Section: Results and Discussion -Xps Interfacesmentioning
The interaction between (001) n-Si and NiO x was investigated with regard to the oxygen evolution reaction (OER), applicable either for water splitting or CO 2 reduction. Thin layers of nickel oxide were deposited step by step by reactive sputter deposition and analyzed in-situ after each step using X-ray photoelectron spectroscopy (XPS). This was performed for silicon with different surface preparations: H-termination, thermally grown oxide (2 Å) and a monolayer of native oxide (4 Å). Upon contact formation the initial flatband like situation in the Si substrates changed to a 0.35 to 0.4 eV upward band bending for all three heterojunctions, with an alignment of the valence bands favorable to hole extraction. With near identical heterojunction performance and identical NiO x catalyst layers (η(10 mA/cm 2 ) = 0.44 ± 0.01 V vs. RHE on Ni) an equally identical performance for the OER would be expected. While the native oxide covered sample shows the expected performance in cyclic voltammetry measurements the others fall short of expectations. Using chopped light measurements, this under-performance could be attributed to a higher density of defect states at the silicon surface. Apparently a 4Å SiO 2 layer is sufficient protection to prevent the formation of defect states during NiO x deposition, thinner protective layers or none at all result in increased defect states, while thicker layers perform poorly due to their high resistance. Direct photoelectrochemical devices are an exciting approach to the storage of renewable energies. Depending on the preferred energy cycle they can be used either for water splitting or CO 2 reduction, in the end it is only a question of the employed catalysts and necessary overpotentials. A direct photoelectrochemical device has two main functional parts, which do not necessarily have to be physically separate. First, there is the photoabsorber, basically a solar cell, who has to supply the necessary photovolage U ph and photocurrent J ph to power the desired redox reaction. Second, the catalytic surface, which is in direct contact with the electrolyte and should be catalytically active, thus allowing high current densities at low overpotentials η. In an ideal case the total device performance should be a result of those two contributions only.Initial research on water splitting was focused on a single semiconducting material performing well in both functions. This was first demonstrated on a TiO 2 electrode by Fujishima and Honda in 1972. 1 In such a device the photoabsorber functionality is defined by the interface junction between semiconductor and electrolyte. Investigated materials were mostly wide bandgap materials, as they could, in theory, provide the necessary U ph .However, the double function of the semiconductor electrolyte interface makes an evaluation of such devices difficult, as it is hard to determine whether a lack of performance is a result from poor current voltage (IE) behavior of the junction or the poor catalytic performance of the material. Furthermore, t...
“…Both the unthermolyzed and thermolyzed solids show peaks at about 529.5 and 531.5 eV. The low energy peak is assigned to surface lattice oxygen, and the higher energy peak to adsorbed oxygen and surface hydroxyl species at defect sites [53][54][55]. Any oxygen associated with Ni 3+ (NiO is non-stoichiometric) will also occur at about 531.5 eV [55].…”
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