The influence of crystallinity on the resistive switching behavior of TiO2

Mähne, Hannes; Slesazeck, Stefan; Jakschik, S.; Dirnstorfer, I.; Mikolajick, Thomas

doi:10.1016/j.mee.2011.03.030

Cited by 28 publications

(11 citation statements)

References 4 publications

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“…From the experiments we found that the use of Cu and Ti electrodes in the construction of TiO2-based MIM cells has some advantages over other electrodes pairs, because lower transition voltages where found than those reported previously. Transition voltages of about 2.5, -2, 4, and 2 V for the SET and -2, 2, -4, and -2 V for the RESET, have been reported for the electrodes combination Ag-ITO [14], Al-Al [19], Cu-ATO [25], and Pt-Al [26], respectively, among many others, contrasting with -1 and 1 V voltages found in our samples. In addition, an easy way of preparation is obtained by using the Ti as an electrode, since it, as well as the TiO2 thin films can be prepared in the same process, one after another.…”

Section: Resultscontrasting

confidence: 94%

Bipolar resistive switching on Ti/TiO2/NiCr memory cells

Rodriguez¹,

Herrera²,

Lira³

et al. 2017

Superficies y Vacio

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We investigated the electric-field-induced resistance-switching behavior of metal-insulator-metal (MIM) cells based on TiO2 thin films fabricated by the reactive RF-sputtering technique. MIM cells were constructed by sandwiched TiO2 thin films between a pair of electrodes; Ti thin films were employed to form an ohmic bottom contact and NiCr thin films were employed to form Schottky top electrodes obtaining Ti/TiO2/NiCr MIM cells. Schottky barrier height for the TiO2/NiCr junction was determined according to the thermionic emission model by using the Cheung´s functions. SEM and Raman analysis of the TiO2 thin films were carried out to ensure the quality of the films. Current-Voltage (I-V) sweeps obtained at room temperature by the application of dc bias showed a bipolar resistive switching behavior on the cells. Both low resistance state (ON state) and high resistance state (OFF state), of Ti/TiO2/NiCr cells are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 103 and the retention properties of both states are very stable after 105 s with a voltage test of 0.1 V.

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Section: Resultscontrasting

confidence: 94%

Bipolar resistive switching on Ti/TiO2/NiCr memory cells

Rodriguez¹,

Herrera²,

Lira³

et al. 2017

Superficies y Vacio

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“…The conventional RS memory composed of crystalline materials requires the electroforming process that distorts the crystalline structure to generate conductive channels of the vacancy. [44][45][46][47] In other words, the film with low crystallinity may not need the electroforming process. As we confirmed the XRD data (Figure S1, Supporting Information), the decreased BiI 3 peak intensity from point 1 film implies the low crystallinity, which would result in electroforming-free process.…”

Section: Resultsmentioning

confidence: 99%

“…The 0.75BiI 3 -0.25Bi 2 S 3 mixture device, with a 170 cycles endurance, exhibits relatively stable HRS and LRS, attributed to the amorphous nature of the mixture film. [44][45][46][47] Additionally, the retention of point 1 device is maintained without degradation as LRS or HRS for 10 000 s (Figure 3b). In the case of point 1 device, the average of set voltages is 0.98 V (Figure 2f), indicating that applied 1 V for on state of retention could not form stable conductive filaments.…”

Section: Resultsmentioning

confidence: 99%

Combinatorial Physical Vapor Deposition : A New Methodology for Exploring Eco‐friendly Composition for Halide‐based Resistive Switching Memory

Lee

Kim

et al. 2022

Adv Materials Inter

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Due to the excellent charge mobility and tunable composition engineering, halide materials are being considered as new resistive switching (RS) memory materials. However, conventional halide materials‐based RS memory devices primarily comprise lead‐based compounds and solution‐based processes, implying that researching new compositions for eco‐friendly RS memory one‐by‐one synthesis would be extremely time consuming. This study reports the fabrication of an eco‐friendly RS memory composition using a combinatorial physical vapor deposition (PVD) technique. The fabricated films are classified into three device types: RS memory, write‐only‐read‐many, and insulator device type, based on the mole fraction of bismuth sulfide (Bi2S3). The 0.75BiI3–0.25Bi2S3 mixture devices exhibit reliable and stable RS memory characteristics with an electroforming‐free process. Additionally, the study of cohesive, formation, and migration energies via first‐principles simulations demonstrate that the type of device changes because of their inability to develop and migrate their anion vacancies, implying that the amorphous nature of the device cannot retard the movement of iodine vacancies. This study is the first to investigate a new composition of eco‐friendly halide materials‐based RS memory via the combinatorial PVD method. These findings will serve as a powerful tool for investigating new compositions of eco‐friendly RS memory.

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“…And the process parameters of CMP were list on Table I. [2][3][4][5] Platen rotation rate(rpm) Head rotation rate(rpm) 40 Slurry flow rate(ml/min) 200 Slurry PH [3][4][5][6][7][8][9][10][11] TiO 2 film which was deposited on 4inchs Si wafers by sputtering system. Figure 1 represents the surface topography (5μ m×5μ m) of AFM for as-deposited TiO 2 .…”

Section: Methodsmentioning

confidence: 99%

Optimization of Slurry and Technological Parameter on Chemical Mechanical Polishing of Titanium Dioxide Film for IC

Ren¹,

Zhang

Wang

et al. 2012

ECS Trans.

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Titanium dioxide (TiO 2 ) has shown a great potential to be used in resistive random access memory, capacitor, solar cell and sensor. However, the surface topography as-deposited TiO 2 film cannot meet the requirement of IC. Therefore, TiO 2 film must be flattened before being applied into semiconductor devices. In this paper, chemical mechanical polishing (CMP) was used for polishing TiO 2 film. We studied the effect of slurry PH of polishing from the viewpoint of chemical we found the removal rate with acidic slurry is lower than the removal rate obtained by alkali slurry. The effect of the process parameter such as down force, platen rotation rate were also studied in detail and found the removal rate still exist when there is no pressure and velocity, hence Preston equation was slightly modified. Finally, the surface roughness was reduced from 36Å to 1.2Å, and the removal rate was up to 38.2nm/min.

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The influence of crystallinity on the resistive switching behavior of TiO2

Cited by 28 publications

References 4 publications

Bipolar resistive switching on Ti/TiO2/NiCr memory cells

Bipolar resistive switching on Ti/TiO2/NiCr memory cells

Combinatorial Physical Vapor Deposition : A New Methodology for Exploring Eco‐friendly Composition for Halide‐based Resistive Switching Memory

Optimization of Slurry and Technological Parameter on Chemical Mechanical Polishing of Titanium Dioxide Film for IC

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