The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules

Foxon, C.T.; Harrison, I.; Новиков, С. В.; Li, T.; Campion, R. P.; Staddon, C. R.; Davis, C.S.; Winser, A.J.; Kovarsky, A.P.; Ber, B.Ja.

doi:10.1016/s0022-0248(01)01716-x

Cited by 10 publications

(4 citation statements)

References 12 publications

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“…And then extra As adatoms over $5 Â 10 19 cm À 3 would compete with N adatoms and limited As adatoms could be incorporated on N-sites of GaNAs. According to Foxon et al, weak and broad emission from GaNAs layer was observed around 2.7 eV, and they believed that its luminescence came from As Ga double donor in GaN [6][7][8]. In order to check whether our GaNAs also gives As double donorrelated emission or not, luminescence properties of all samples in Fig.…”

Section: Resultsmentioning

confidence: 89%

“…When GaNAs layers were grown at higher temperature for better crystalline quality, As atoms was not alloyed but doped in GaN below 10 19 cm À 3 . But weak emissions from those GaNAs layers were observed around 2.7 eV, and it was believed that its photoluminescence came from As Ga substitutional defects which acted as double donors in GaN [6][7][8]. Even if bandgap energy of GaN, 3.4 eV, could be lowered to 2.3 eV for green emission by incorporating As atoms over 3% in GaN, it is extremely difficult to incorporate sufficient As atoms in GaN to gain large bandgap lowering as predicted theoretically.…”

Section: Introductionmentioning

confidence: 95%

“…Even if bandgap energy of GaN, 3.4 eV, could be lowered to 2.3 eV for green emission by incorporating As atoms over 3% in GaN, it is extremely difficult to incorporate sufficient As atoms in GaN to gain large bandgap lowering as predicted theoretically. Reports on As incorporation in GaN by Foxon et al focused just on GaN:As with low As concentration, 10 17 -10 19 cm À 3 [6][7][8], which was quite different situation from GaNAs with 1 As atomic %. Therefore, it is very important to understand how As atoms are incorporated in GaN.…”

Section: Introductionmentioning

confidence: 95%

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Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Na¹

2010

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 95%

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Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Na¹

2010

Journal of Crystal Growth

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“…[5-8] When more As was incorporated in GaN, it caused the formation of GaAs-like phase in GaNAs layer or GaAs islands on GaN rather than GaNAs phase. [8,9] Moreover, there are some problems in surfaces flatness. Granular surface morphology was obtained from the beginning and the granule size was controlled by the amount of As supply.…”

mentioning

confidence: 99%

The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition

Kim

Kwon

et al. 2004

phys. stat. sol. (c)

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. Lp, 68.55.Nq, 81.05.Ea, 81.15.Gh 20 nm GaNAs epilayers were grown on GaN/sapphire by metalorganic chemical vapor deposition. As growth temperature decreased from 720 to 565 °C, it was found that As concentration was increased from 1.3 × 10 20 and saturated at about 5 -6 × 10 20 cm -3. GaAs-like GaNAs islands were formed on GaN at 530 °C. In case of GaNAs epilayers grown at 565 and 600 °C, GaN-like GaNAs phases were observed by high-resolution X-ray diffraction (XRD) and low angle XRD. By low angle XRD and high-resolution TEM with electron nano-beam diffraction patterns, the FCC-stacked region in wurtzite matrix was clearly observed in thin GaNAs layers. We propose that this structural nonuniformity in GaNAs might be caused by the nonuniform distribution of As concentration.1 Introduction Recently, GaN-related materials have attracted significant attention for their applications to short-wavelength optical devices or high-power/high-temperature electronic devices. The growth of high-quality InGaN epilayers for green light emission is regarded rather difficult due to the requirement of growing high In content InGaN at lower temperatures. As an alternative, arsenic incorporation into GaN is one of the new approaches to longer wavelength device fabrication in nitride materials system since a large band gap bowing can be obtained with addition of a very small amount of As in GaN epilayers. [1-3] However, it was reported that it is very difficult to incorporate As into nitride semiconductor with high crystal quality because of large differences in atomic orbital energy, size, and electronegativity between N and As. [1, 2, 4] As solubility in GaN was as very low as ~1 atomic %, and they showed 2.6 eV emission related not to alloyed GaNAs, but to As-related defect level. The peak intensity was affected by the amount of As supply. [5-8] When more As was incorporated in GaN, it caused the formation of GaAs-like phase in GaNAs layer or GaAs islands on GaN rather than GaNAs phase. [8,9] Moreover, there are some problems in surfaces flatness. Granular surface morphology was obtained from the beginning and the granule size was controlled by the amount of As supply. [8,10]. Therefore, it is very important to know the details of arsenic incorporation behavior in GaN at various growth conditions and its dependence on structural and optical properties of GaNAs.In this work, we characterized the As contents in GaN grown at various growth temperatures. Therefore, we tried to explain As effect on structural property when As was incorporated in thin GaN epilayers.

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Optical characterisation of Bi‐doped GaN films grown by molecular beam epitaxy

Ibáñez

Pastor

Cuscó

et al. 2005

Physica Status Solidi (a)

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We use cathodoluminescence and Raman spectroscopy to investigate GaN layers grown by plasma‐assisted molecular beam epitaxy with different Bi fluxes. We find that the growth of GaN with an additional Bi flux favours the formation of submicron cubic domains, which results in layers with reduced crystalline quality and lower luminescence emission. We detect a Bi‐related Raman feature at low frequencies that we tentatively assign to local Bi modes in GaN, which indicates that a fraction of Bi atoms incorporates into the GaN lattice. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules

Cited by 10 publications

References 12 publications

Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition

Optical characterisation of Bi‐doped GaN films grown by molecular beam epitaxy

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