Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Na, Hyunseok

doi:10.1016/j.jcrysgro.2010.03.031

Cited by 2 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12,13 The achieved GaNAs arsenic incorporation efficiency was not especially high in one case. 13 The second group reported somewhat higher concentrations but provided solid XRDbased information about crystalline quality only for samples below 5% As content. 12 Similarly to the growth of GaNAs using the MBE method, it would be expected that lowering the growth temperature would favor an increase in the arsenic content.…”

Section: ■ Introductionmentioning

confidence: 93%

“…In the case of metalorganic vapor-phase epitaxy (MOVPE), only a few groups reported the growth of III–N diluted with arsenic using tertiarybutylarsine (TBAs) as a source. , The achieved GaNAs arsenic incorporation efficiency was not especially high in one case . The second group reported somewhat higher concentrations but provided solid XRD-based information about crystalline quality only for samples below 5% As content .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Olszewski,

Majchrzak,

Grodzicki

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

The growth of GaNAs with arsenic is important due to band engineering in the valence band of GaN, but it is very challenging due to the difference in the optimal growth temperatures for GaN and GaAs. In this study, we present the results of growing GaNAs via metal−organic vapor phase epitaxy with trimethylarsine as the arsenic source. By reducing the growth temperature and increasing the V/III ratio, we obtained an As content of up to 7.6%. Crystalline material quality and composition were investigated with high-resolution X-ray diffraction. Atomic force microscopy determined surface roughness root-mean-square values between 0.4 and 2 nm. The internal structure of the layers was investigated via transmission electron microscopy, proving their high crystalline quality. It also showed that further reduction of growth temperature resulted in the formation of a zincblende GaAs polycrystalline layer.

show abstract

Section: ■ Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Olszewski,

Majchrzak,

Grodzicki

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

Kudrawiec

Hommel

2020

Applied Physics Reviews

View full text Add to dashboard Cite

A key material system for opto- and high-power electronics are III-nitrides. Their functionality can be expanded when bandgap engineering is extended beyond common materials such as AlN, GaN, and InN. Combining these three compounds with boron nitride and other III–V compounds (GaP, GaAs, GaSb, InP, etc.) is an intuitive method of expanding bandgap engineering in semiconductor devices. This may allow improvement of current devices for which performances are limited by the intrinsic properties of common III-nitride alloys, as well as the creation of novel devices. A comprehensive review of this activity is presented in this article, including an up-to-date compilation of material parameters for wurtzite boron nitride; its alloying with other III-nitrides, including structural and optical characterization; the band anticrossing model for III-nitrides diluted with group V atoms; their synthesis and structural and optical characterization; and examples of applications of III-nitrides containing boron and group V atoms in semiconductor devices. It is shown to be very beneficial for ultraviolet emitters to incorporate alloying of III-nitrides with BN, as these compounds have lattice constants much smaller than that of AlN, offering unique possibilities in strain engineering. It is shown that the incorporation of P, As, Sb, and Bi in GaN is low when the material is deposited at this temperature, which is optimal for the host. Lowering the growth temperature significantly enhances the incorporation of isovalent dopants, but deteriorates the optical quality of the material. The obtained changes in the electronic band structure can be beneficial in many applications, including water splitting or shifting emission toward longer wavelengths.

show abstract

Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Cited by 2 publications

References 14 publications

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE

Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

Contact Info

Product

Resources

About