The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

“…As mentioned in the introduction section, a general trend in ZnON TFT with respect to nitrogen composition was the enhancement of mobility. 31,35,38 However, the mobility was degraded when ZnON became extremely N-rich because the formation of electrically neutral (V N −V N ) 0 pairs is promoted by capturing electrons from ionized V N states. 31 In our results, the nitrogen composition increased with P N2 (%) and the electrical properties of ZnON TFTs including mobility were improved, following a general trend.…”

“…Over the past few years, most studies on ZnON thin films have used reactive sputtering of metallic Zn targets under Ar/O 2 /N 2 gas mixtures. − ,− ,− This method is advantageous for achieving desirable compositions and properties of ZnON thin films because it enables comprehensive combinations of each gas flow rate. In general, the flow rate of the N 2 gas was the highest among the gas mixtures to incorporate nitrogen as many as possible into ZnON.…”

Surface potential based modeling of zinc oxynitride thin film transistors

“…TFTs consists of a stack of insulator and semiconductor thin films between gate and source-drain contacts. As the experimental data reported in [16] has been used here for verifying the models, the device structure given in [16] is adopted. The cross section of this inverted staggered TFT is shown in figure 1.…”

“…Further, a threshold voltage model has been developed specifically for ZnON. The drain current and threshold voltage models have been validated against previously reported experimental data on ZnON TFTs [16].…”

“…A mobility value as high as 200 cm 2 (Vs) −1 has been reported in literature [14]. The density of states (DoS) of ZnON material, which governs the carrier transport through the semiconductor, has been studied both experimentally and theoretically, to investigate the reasons for the superior mobility offered by ZnON [15][16][17][18]. It has been reported that the low effective mass of electrons in ZnON thin films is the reason for the increased mobility [8].…”