We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p-ZnO/n-GaN. The LED structure consisted of a phosphorus doped p-ZnO film with a hole concentration of 6.68×1017cm−3 and a Si-doped n-GaN film with an electron concentration of 1.1×1018cm−3. The I–V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p-ZnO which was reduced as the result of the band offset at the interface of p-ZnO and n-GaN.
Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.
We present the first demonstration of a III-V MOSFET heterointegrated on a large diameter Si substrate and fabricated with a VLSI compatible process flow using a high-k/metal gate, self-aligned implants and refractory Au free ohmic metal. Additionally, TXRF data shows that with the correct protocols III-V and Si devices can be processed side by side in the same Si fabrication line The L g = 500 nm device has a excellent drive current of ~450 µA/µm and intrinsic transconductance of ~1000 µS/µm indicating that III-V VLSI integration is a serious contender for insertion at or beyond the 11 nm technology generation.
ZnO-based thin film transistors ͑TFTs͒ were fabricated on a SiN x /indium tin oxide ͑ITO͒/glass substrate by radio frequency ͑rf͒ magnetron sputtering at 350°C. The transfer characteristics of the fabricated TFT showed a drain current on/off ratio of 10 5 , a field effect mobility of 1.698 cm 2 /Vs, an off current lower than 8 nA, and a threshold voltage of 2.5 V. The stability of the ZnO TFTs was examined under various electrical bias stress conditions. The operation of ZnO TFT was stable at the electrical bias stress ͑−10 ഛ V GS ഛ 10 at V DS = 5, 10 V͒ for stress time of 200 s. However, with increasing bias stress and the duration of the stress, the transfer characteristics of ZnO TFT were degraded, and the devices were physically damaged due to heavy charge accumulation in the ZnO channel layer. In addition, trapping of tunneling electrons in the SiN x caused threshold voltage shift.
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