2020
DOI: 10.1039/d0ra00459f
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The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

Abstract: Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

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Cited by 11 publications
(5 citation statements)
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“…This suggests that the W buffer layer helps promote the (111) Pt phase at the W/Pt interface, resulting in an enhanced PMA at the Pt/Co interface. This shares the same mechanism with the previously studied Ta/Pt/Co [20] and Ti/Pt/Co [21] multilayers.…”
Section: Tuning Magnetic Anisotropy In W/pt/cosupporting
confidence: 88%
“…This suggests that the W buffer layer helps promote the (111) Pt phase at the W/Pt interface, resulting in an enhanced PMA at the Pt/Co interface. This shares the same mechanism with the previously studied Ta/Pt/Co [20] and Ti/Pt/Co [21] multilayers.…”
Section: Tuning Magnetic Anisotropy In W/pt/cosupporting
confidence: 88%
“…[8][9][10], L10 ordered tetragonal structures (CoPt,FePt) [11,12], HM/FM/HM (Pt/Co/Pt, Ir/Co/Pt etc.) trilayers [13][14][15] and rare earth-transition metal alloy films(TbFeCo, GdFeCo etc.) [16,17]can be used as a strong PMA structure.…”
Section: Introductionmentioning
confidence: 99%
“…), [8][9][10] L 10 ordered tetragonal structures (CoPt, FePt), 11,12) HM/FM/HM (Pt/Co/Pt, Ir/Co/Pt etc.) trilayers [13][14][15] and rare earth-transition metal alloy films (TbFeCo, GdFeCo etc) 16,17) can be used as a strong PMA structure. Among these materials, the magnetic multilayer films with PMA are of great interest because of their properties such as strong thermal stability, low critical current density, and strong out-of-plane magnetization for nanoscale spintronic applications (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…This surface deposition energy is a common limiting factor when considering Pt growth on Si and is typically mitigated by the use of a refractory metal buffer layer, e.g. Ta 59 , to seed layer-by-layer growth. Here we see that the Nb(15) underlayer acts as an effective seed to Pt growth and so the combined stack provides an effective source of PMA, e.g., for mixed anisotropy spin valves, even at the low values required for superspintronic applications.…”
Section: Resultsmentioning
confidence: 99%