The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

Oliver, Rachel A.; Kappers, Menno J.; Humphreys, C. J.; Briggs, G. Andrew D.

doi:10.1016/j.jcrysgro.2004.08.072

Cited by 27 publications

(13 citation statements)

References 17 publications

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“…This was unexpected as the growth rate was low on this sample (see Table 1), and both low pressure and high temperature cause high diffusion lengths for the indium atoms. However, from work on c-plane 45,46 and a-plane 47 planar thin films, it was found that low pressure can increase indium incorporation. This was suggested to be caused by the suppression of indium desorption with enhanced gas mass transfer rates of precursor species through the boundary layer, 45 as the diffusion in gases varies inversely proportional with pressure.…”

Section: Discussionmentioning

confidence: 99%

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

et al. 2016

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Abstract. Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both f11-20g a-plane and f10-10g m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the f10-10g m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the f10-10g facets of the NRs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Discussionmentioning

confidence: 99%

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

et al. 2016

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“…There are some spiral mounds with a pits in the center, with full width at half maximum (FWHM) about 500nm, and many 3D nanostructures with diameter about 250nm. The InGaN growing in a spiral growth mode[13], in which one end of the step is pinned by dislocation with a screw component, has previously been observed in MOCVD InGaN/GaN growth for thick layers. Hence, the surface of the InGaN/GaN MQWs has many spiral mounds with pits in the center.…”

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confidence: 72%

Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission

Wang

Wen

et al. 2007

Optoelectronic Materials and Devices II

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InGaN/GaN multiple quantum wells (MQWs) structure for ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition (MOCVD). The High resolution x-ray diffraction (HRXRD), atomic-force microscopy (AFM) and photoluminescence (PL) are used to characterize the structural and optical prosperities of MQWs, respectively. HRXRD shows multiple satellite peaks to 3rd order indicates the high quality of InGaN/GaN layer interface. AFM measurement shows that there are some spiral growth hillocks and 3D nanostructures on the MQWs surface. They are related with the surface kinetics or thermodynamics of InGaN growth. Temperature-dependent PL results show that there exists a clear excition-localization effect in the InGaN/GaN MQWs. The fitted σ value of InGaN/GaN MQWs is around 8meV. The emission peak was almost unchanged with the increase PL excitation power.Those results indicate there is almost none piezoelectric field-induced quantum-confined stark effect in the InGaN/GaN MQWs due to the low In content and thin quantum well thickness.

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“…These variables include the active region NH 3 flow rate and the barrier Si flow rate and their interaction effect on the EL optical output power (OOP) as well as the NH 3 flow rate and the barrier growth time on the PL intensity of the emission from the quantum well structures. Both NH 3 flow rate 20 and Si flow rate 21 have previously been linked to the growth mode and the kinetics of nanostructure formation in the growth of InGaN/GaN quantum well structures. NH 3 flow rate has been shown to influence the growth mode by decreasing the barrier to adatom incorporation at step edges resulting in a transition between 2D island nucleation and step flow growth as the NH 3 flow rate is increased.…”

Section: Resultsmentioning

confidence: 99%

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

Grandusky

Jamil

Jindal

et al. 2005

Fifth International Conference on Solid State Lighting

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The growth of violet light emitting diodes (LEDs) was optimized using a statistical design of experiment (DOE) approach and several important interaction effects were found. The DOEs studied the effect of several variables on the well layer, the barrier layer, and the pAlGaN cladding layer. These variables included the gallium flow rate, the indium flow rate, the growth temperature, and the growth time for the well layer, the ammonia flow in the active region, the barrier growth time, and the Si doping of the barrier, as well as the growth time, growth temperature and Mg doping of the pAlGaN cladding layer. The LEDs were optimized based on combinations of several responses from photoluminescence and electroluminescence measurements. An overall process desirability was obtained, based on achieving the desired wavelength and maximizing the PL intensity and optical output power. Significant interactions between variables played a major role in the optimization of optical output power as well the emission wavelength. The understanding of these interactions led to the optimization of the LEDs both by improvements in the structure and improvements in the quality of the layers. Several of the interactions will be explained based on kinetic models of GaN growth by MOCVD.

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The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

Cited by 27 publications

References 17 publications

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

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