The influence of AlN buffer layer thickness on the properties of GaN epilayer

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

“…Solid lines in the figure are fitting curves using the function proposed in Ref. [11]. Again, a strong temperature-dependent trend is observed.…”

“…Since tilt angle is related to screw dislocation (b s ¼ h0 0 0 1i) density, the results exhibit a pronounced increase of screw TDs in InN epilayers on elevating growth temperature. The inhomogeneous strain is typically an order of magnitude larger than that in ARTICLE IN PRESS high-quality GaN layers [11], which implies the inferior structural quality of InN grown by MOCVD. In addition, it was found that broadening of the o scan and oÀ2y scan is mainly caused by tilt disorder and inhomogeneous strain, respectively; for instance, a tilt contributes over 95% to the FWHM of (0 0 0 2) rocking curves, while x ?…”

Method for HVPE growth of thick crack-free GaN layers

“…In order to obtain reasonable quality of GaN grown on these foreign substrates, intermediate layers are needed to accommodate lattice mismatch and thermal mismatch. The growth conditions for these so-called nucleation layers determine to a great extent the properties of the subsequently grown layers [16][17][18][19].…”

Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy

“…However, a thin LT InSb buffer layer results in a large grain size and a low nucleation density, that leads to take too long time for the ARTICLE IN PRESS lateral growth of InSb islands and the quality of InSb layer becomes bad. So there exists the optimal thickness for the initial LT InSb buffer layer, that produce large lateral grain size and low nucleation density, and the lateral growth and coalescence of InSb islands will be promoted [15][16][17][18][19]. Based on the experimental results above, it is found that the 30 nm thick initial LT buffer layer is the optimal one for high-quality HT InSb layer.…”