The influence mechanism of melt flow instability on the temperature fluctuation on the crystal/melt interface during Czochralski silicon crystal growth

Ding, Junling; Liu, Lijun

doi:10.1016/j.ijheatmasstransfer.2019.118463

Cited by 16 publications

(7 citation statements)

References 33 publications

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“…And the algorithms for solving the temperature and velocity fields in the Cz furnace have been presented in Refs. [14,15].…”

Section: Computational Methods and Boundary Conditionsmentioning

confidence: 99%

Modelling and Control of Thermal Stress in TSLAG (Tb3Sc1.95Lu0.05Al3O12) Magneto-Optical Crystals Grown by Czochralski Method

Ding,

Zhang,

Hao

et al. 2024

Crystals

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Tb3Sc1.95Lu0.05Al3O12 (TSLAG) crystals are novel and high-quality magneto-optical materials with the most promising application as the core component of Faraday devices. Cracking is an obstacle to TSLAG crystal growth and is closely influenced by crystal thermal stress distribution. In this work, the evolution of thermal stress during TSLAG crystal growth in the initial Czochralski (Cz) furnace is numerically studied. The reasons for high thermal stress in TSLAG crystal are explained based on the results about the melt flow, the temperature distribution in the furnace, and the crystal/melt interface shape. A large crucible with a shallow melt is proposed to address the problem of significant variations in melt depth during TSLAG crystal growth. Based on the numerical results, the proposed design can stabilize the melt flow structure, suppressing changes in the crystal/melt interface shape and effectively improving thermal stress in the TSLAG crystal growth process, which contributes to precisely regulating the preparation of large-sized high-quality TSLAG crystals.

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“…And the algorithms for solving the temperature and velocity fields in the Cz furnace have been presented in Refs. [14,15].…”

Section: Computational Methods and Boundary Conditionsmentioning

confidence: 99%

Modelling and Control of Thermal Stress in TSLAG (Tb3Sc1.95Lu0.05Al3O12) Magneto-Optical Crystals Grown by Czochralski Method

Ding,

Zhang,

Hao

et al. 2024

Crystals

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“…The interface could be corrected to an isothermal surface or constant growth rate surface. 23,27,33 However, there exist some issues with the methods mentioned above if a non-axisymmetric magnetic field is used. The issues will be introduced at step 2.…”

Section: Crystengcomm Papermentioning

confidence: 99%

“…The interface cannot be directly corrected to the same value of temperature or growth-rate as previous works did with an axisymmetric magnetic field or without magnetic field. [23][24][25] In this paper, a local 3D model with ANSYS FLUENT was presented. A special method of crystallization interface correction was developed to obtain the axisymmetric interface even with a non-symmetric melt flow.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

et al. 2023

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“…Increasing the diameter of pulling crystal can signi cantly reduce the cost of producing [9,10]. But the crystal diameter increase results in turbulent ow in the melt characterized by uctuation in velocity and temperature [11], which affects the growth of large-diameter crystal. The continuous Czochralski (CCZ) method is also an important method for cost reduction, but in the presence of an inner crucible, the oxygen content in both the melt and the crystal increases, which affects the crystal quality, such as point defects, streaks, and photodegradation in solar cells [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Influence of thermal conductivity and emissivity of heat shield surface material on the thermal field of Czochralski silicon crystal growth

Lv,

Hu,

et al. 2024

Preprint

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Silicon crystal for solar cells are mainly produced by the Czochralski (CZ) method, in which the quality and production cost of silicon crystal are mainly affected by the thermal field of the crystal growth furnace. While the thermal field is significantly influenced by the heat shield material, in this study, the effect of thermal conductivity and emissivity of the heat shield material on the global thermal field was investigated by numerical simulation in Ansys Fluent software. The heat shield surface is divided into two parts, the high-temperature side part (close to the crucible and melt) and the low-temperature side part (close to the crystal), which are named as Hot-Side-Material and Cold-Side-Material, respectively. The results show that the same material can be chosen for both parts and the smaller the thermal conductivity and the emissivity of the material, the better the thermal field. As the thermal conductivity and emissivity of the heat shield surface material decrease, the melt-crystal (m-c) interface deflection decreases; the maximum thermal stress of the crystal and the required heater power are also reduced, while the crystal axial temperature gradient increases. Therefore, it is recommended to select material with low emissivity and low thermal conductivity as heat shield surface material.

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The influence mechanism of melt flow instability on the temperature fluctuation on the crystal/melt interface during Czochralski silicon crystal growth

Cited by 16 publications

References 33 publications

Modelling and Control of Thermal Stress in TSLAG (Tb3Sc1.95Lu0.05Al3O12) Magneto-Optical Crystals Grown by Czochralski Method

Modelling and Control of Thermal Stress in TSLAG (Tb3Sc1.95Lu0.05Al3O12) Magneto-Optical Crystals Grown by Czochralski Method

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Influence of thermal conductivity and emissivity of heat shield surface material on the thermal field of Czochralski silicon crystal growth

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