Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Abstract

A method including a polynomial fitting step was proposed for crystallization interface correction of Czochralski crystal growth simulation, which can obtain an axisymmetric interface under a non-axisymmetric flow when the crystal rotates.

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters

“…In general, low-cost oxygen control is the eternal theme of the PV-grade Cz-Si crystal growth industry. Although the use of a magnetic field is proved to be efficient for oxygen concentration reduction in 300 mm Cz-Si crystal growth, 31 it remains unsuitable for the PV industry due to its high costs. Therefore, the most feasible and promising method for oxygen control in PV-grade 300 mm diameter n-type Cz-Si crystals is through the further optimization of the heating zone structure and growth parameters.…”

Research on diameter control of Czochralski Silicon Single Crystal based on PSO parameter tuning for RNN-PFDL-MFAC

“…Wang et al [6] used a lumped parameter model to predict Oxygen concentration levels during silicon crystal development, providing a reference for subsequent crystal control. Liu et al [7] developed a local 3-D heat and mass transfer model incorporating a transverse magnetic field for crystal growth and implemented PID control based on the model. Ren et al [8] proposed a mixed modeling approach that builds on data-driven and mechanistic models, applied it to modeling the Cz-si monocrystal process, and achieved diameter control.…”