The incorporation of hydrogen into III-V nitrides during processing

Pearton, S. J.; Shul, R. J.; Wilson, R. G.; Ren, F.; Zavada, J. M.; Abernathy, C. R.; Vartuli, C. B.; Lee, J. W.; Mileham, Jeffrey; MacKenzie, J. D.

doi:10.1007/bf02666647

Cited by 33 publications

(9 citation statements)

References 8 publications

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“…Especially the influence of different etching procedures or heat treatment of the substrate is considerable. A possible cause for different results on pre-annealed substrates might be the incorporation of hydrogen into GaN during various processing steps and its removal upon annealing at higher temperatures [22]. Another explanation is that nitrogen depletion at the interface occurs at annealing temperatures around 900° and leads to an increased donor density.…”

Section: Discussionmentioning

confidence: 99%

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Chang

1997

MRS Internet j. nitride semicond. res.

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The phase equilibria in the ternary Ti-Ga-N have been investigated. Interfacial reactions in Ti/GaN contacts have been studied by diffusion couple experiments. The ternary phase Ti2GaN was confirmed by x-ray diffraction in bulk samples as well as in massive Ti/GaN diffusion couples and annealed Ti thin films on GaN. The diffusion path in samples, annealed at 850°C in Ar gas, is GaN/TiN/Ti2GaN/Ti3Ga/Ti. A planar TiN layer forms in direct contact to GaN and governs the electrical properties of annealed Ti/GaN contacts. Thin film contacts were fabricated by sputtering Ti on MOVPE grown n-GaN (5×1017cm−3) and subsequent rapid thermal annealing in an Argon atmosphere. Initially non-linear current-voltage characteristics become ohmic after annealing and a specific contact resistance of approximately 10−2 Ωcm2, measured with the circular transmission line method, was found after annealing at 9000C for 1 min.

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Section: Discussionmentioning

confidence: 99%

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Chang

1997

MRS Internet j. nitride semicond. res.

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“…Such an effect leads to a decreasing doping concentration with decreasing wire thickness; it has been found previously for nanowires grown by a combination of VLS and VS growth. , However, in contrast to those reports our main dopant is hydrogen. Because of the high diffusivity of hydrogen in III-nitrides, we expect the doping profile to be homogeneous in both radial and axial directions. Possible axial or radial gradients in doping concentration could equilibrate easily at the elevated temperatures used during growth .…”

mentioning

confidence: 99%

“…Because of the high diffusivity of hydrogen in III-nitrides, we expect the doping profile to be homogeneous in both radial and axial directions. Possible axial or radial gradients in doping concentration could equilibrate easily at the elevated temperatures used during growth . Furthermore, during growth hydrogen can diffuse from the gas phase into the wire material at both small and large wire side lengths .…”

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confidence: 99%

Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires

Blömers

Huang

et al. 2012

Nano Lett.

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In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.

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“…Although ECR‐RIE, ICP‐RIE, and ion beam etching have a unique ability to control the ion flux and ion energy separately, these techniques usually involve corrosive chlorine, chlorine mixtures, and chlorine‐based halocarbons based plasmas [18, 19] that damage the vacuum system and requires expensive reactive chamber and specific filtration system [20] in contrast with less corrosive SF 6 , CH 4 , Ar, and H 2 based plasmas [19]. In addition, hydrogen diffusion in GaN during ECR‐RIE can create electrically neutral complexes with dopants [21]. The incorporation of hydrogen leads to uncontrolled variations in conductivity of a semiconductor.…”

Section: Introductionmentioning

confidence: 99%

GaN LEDs fabricated using SF ₆ plasma RIE

Khan¹,

Bi²,

Fan³

et al. 2018

Micro & Nano Letters

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In this work, the authors report a cost-effective fabrication method for making gallium nitride (GaN) light emitting diode (LED) arrays using SF 6 plasma in a conventional reactive-ion etching (RIE) system. The etch rates for GaN were investigated with different radio-frequency power and carrier substrates. The surface roughness due to the etching was also determined for the various recipes used. The optical intensity and the temperature change during operation of the fabricated LED's were investigated. The effect of post-fabrication annealing on enhancement in the electrical and optical properties of the LED's was investigated.

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The incorporation of hydrogen into III-V nitrides during processing

Cited by 33 publications

References 8 publications

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires

GaN LEDs fabricated using SF ₆ plasma RIE

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The incorporation of hydrogen into III-V nitrides during processing

Cited by 33 publications

References 8 publications

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires

GaN LEDs fabricated using SF 6 plasma RIE

Contact Info

Product

Resources

About

GaN LEDs fabricated using SF ₆ plasma RIE