Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Chang, Y. A.

doi:10.1557/s1092578300001289

Cited by 29 publications

(28 citation statements)

References 22 publications

(26 reference statements)

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“…The most relevant example as a thin-film synthesis method is Ti 3 SiC 2 synthesized by annealing of Ti-based contacts used as electrodes in SiC-based semiconductor devices [191,192,193,194]. Another example relevant to the semiconductor industry is Ti 2 GaN which can form at the interface between Ti-based films on GaN substrates [195].…”

Section: Solid-state Reactionsmentioning

confidence: 99%

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The M+1AX phases: Materials science and thin-film processing

et al. 2010

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This article is a critical review of the M n+1 AX n phases ("MAX phases", where n =1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti 2 AlC, Ti 3 SiC 2 , and Ti 4 AlN 3 . There are ~60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M n+1 X n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods.Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental materials properties. However, the surface-initiated decomposition of M n+1 AX n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically require synthesis temperatures of ~800 °C, recent results have demonstrated that V 2 GeC and Cr 2 AlC can be deposited at ~450 °C. Also, thermal spray of Ti 2 AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principles calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials 3 analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti 4 SiC 3 , Ta 4 AlC 3 , and Ti 3 SnC 2 . Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics. 4

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Section: Solid-state Reactionsmentioning

confidence: 99%

“…MAX phases synthesized by solid state reactions or sputter deposition can potentially be used as electrodes in SiC-, AlN-, or GaN-based semiconductor devices or sensor applications [195,198,326]. "Ti-based" contacts to SiC are in use and typically contain Ti 3 SiC 2 formed by solid state reactions [191,192,326].…”

Section: Applicationsmentioning

confidence: 99%

The M+1AX phases: Materials science and thin-film processing

et al. 2010

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“…Intermixing is observed and also the accumulation of Au at the interface and at the contact edges. Nitride alloys like titanium nitride (TiN) formed at the interface are thought to generate the ohmic contact behavior [26]. However, in the case of InAlN, despite the intermixing, the alloys do not penetrate the barrier layer, as may be seen from Fig.…”

Section: B Ohmic Contactsmentioning

confidence: 99%

Testing the Temperature Limits of GaN-Based HEMT Devices

Maier

Alomari

Grandjean

et al. 2010

IEEE Trans. Device Mater. Relib.

127

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“…However, their identification was impossible. It was checked that they are not a Ti 2 GaN MAX phase by comparing with a Ti 2 GaN XRD spectrum with [7] and also by calculating the XRD spectrum for a unit cell of such a phase, with the cell parameters taken from [3]. In the SIMS profiles for M04 a peak of gallium, titanium and nitrogen is observed near the surface of the sample, that possibly may be the X or Y phase.…”

Section: Resultsmentioning

confidence: 99%

Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

et al. 2008

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Fabrication of a Ti 2 AlN MAX phase for contact applications to GaN--based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti 2 AlN monocrystalline growth was observed on GaN and Al 2 O 3 substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600• C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti 2 AlN layers showed ohmic behaviour with contact resistivities in the range 10 −4 Ω cm 2 .

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Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts

Cited by 29 publications

References 22 publications

The M+1AX phases: Materials science and thin-film processing

The M+1AX phases: Materials science and thin-film processing

Testing the Temperature Limits of GaN-Based HEMT Devices

Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

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