The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates

Abstract

We report the temperature dependence of the incorporation of Ga during LPE growth of In0.53Ga0.47As on (111) B- and (100) -oriented InP substrates. The distribution coefficients of Ga can be accurately represented by KGa(111)B =6.40×10−6 exp(1.10/kT) and KGa(100)=5.02×10−13 exp(2.37/kT), which are equal at 629 °C. The difference in activation energies is the source of the ’’discrepancy’’ reported by Pearsall etal. that KGa(111)B<KGa(100) at 621 °C while from our results KGa(111)B≳KGa(100) at 650 °C.

Substrate Orientation Dependence of the In‐Ga‐As Phase Diagram for Liquid Phase Epitaxial Growth of In0.53Ga0.47As on InP

“…7 that the solution compositions of Ga for the (111)B face are always larger than those for the (100) face over the entire temperature range 600~176 It is also apparent that, over the entire temperature range, the solution compositions of Ga for the (lll)A face are always somewhat larger than those for the (100) face and are always smaller than those for the (lll)B face. These results also make it clear that there are not any cross points as reported by Antypas et al (7).…”

“…Therefore, from Eq. [1]- [5], 7~.r~l.~) for the (111) and (100) faces can be written as follows AH "Ysurf(1,s)-2X/~a2NA [6] for the (111) face, and AH [7] y~.~,~,~-2a2N * for the (100) face.…”

“…The liquid phase epitaxial (LPE) growth of latticematched In0.~3Ga0.47As on InP is important especially for infrared photodetector (1)(2)(3) and FET (4-6) applications. It has been reported that the solution composition for the growth of lattice-matched In0.53Ga0.47As strongly depends on the orientation of InP substrates (7)(8)(9)(10). However, the growth temperature dependence of the difference of the solution compositions for the growth of lattice-matched In0.~3Ga0.47As on (100) and (111)B InP substrates is different according to each author.…”

“…However, the growth temperature dependence of the difference of the solution compositions for the growth of lattice-matched In0.~3Ga0.47As on (100) and (111)B InP substrates is different according to each author. Antypas et al (7) studied the temperature dependence of the incorporation of Ga during LPE growth of In0.53Ga0.47As on (100) and (lll)B InP in the temperature range 621~176 and they reported that there was a cross point at 629~ at which the solution composition for the growth of In0..~.~Ga,,7As on both faces of InP are equal. On the other hand, Pearsall et al (8) and Nakajima et al (9) reported that the composition of Ga in the solution for the growth of In0.~3Ga047As on (lll)B InP is always larger than that on (100) InP in the temperature range 600~176…”

A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

“…On the other hand, several studies have reported that in liquidphase epitaxial growth of compound semiconductor crystals, the growth rate usually depends on the surface orientation of the substrate, even when the crystals are grown under the same conditions. For instance, Antypas et al (1978) have demonstrated that in the growth of InGaAs on the InP substrate, the incorporation rate of Ga was higher on the (100) surface than that on (111)B. Similarly, Inatomi et al (2005) have reported that for GaP/GaP growth, the growth rate on (111)A surface was smaller than that on (111)B under the same surface supersaturation condition.…”