The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding

Placidi, E.; Arciprete, F.; Fanfoni, M.; Patella, F.; Balzarotti, A.

doi:10.1007/978-0-387-74191-8_1

Cited by 5 publications

(10 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…InAs/GaAs is a prototype of the strained Stranski-Krastanov epitaxial growth in which the stress energy is relaxed by the nucleation of quantum dots (QDs) of different density and volume [1]. At the typical growth temperature of 500 • C, islands that are a couple of monolayers (ML) high-sometimes termed quasi-3D quantum dots (Q3D QDs)-start nucleating on the wetting layer (WL) at a deposition of InAs around 1.45 ML and sit preferentially at the upper edges of twodimensional (2D) islands [2,3]. With increasing coverage, a second family of dots (3D QDs) grows on the terraces and undergoes an explosive nucleation with an order of magnitude change in density within 0.2 ML above a critical coverage θ c ∼ 1.57 ML.…”

Section: Introductionmentioning

confidence: 99%

“…Their volume is larger than the deposited volume because of a sizable surface-mass transport during growth. The WL is also involved and its thickness is reduced progressively by the supply of adatoms to the QDs until the barrier for nucleation increases and the nucleation process ends [3]. We have previously used periodic growth interruption (GI) of the In flux to monitor the surface-mass transport [4], the size distribution of QDs [5], their scale invariance [6], and the WL erosion around QDs nucleated on steps [7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Balzarotti

2008

Nanotechnology

View full text Add to dashboard Cite

Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. 1.IntroductionInAs/GaAs is a prototype of the strained Stranski-Krastanov epitaxial growth in which the stress energy is relaxed by the nucleation of quantum dots (QDs) of different density and volume [1]. At the typical growth temperature of 500°C, a couple-of-monolayers (ML) high islands -sometimes termed quasi-3D quantum dots (Q3D QDs) -start nucleating on the wetting layer (WL) at deposition of InAs around 1.45 ML and sit preferentially at the upper edges of 2D islands. With increasing coverage, a second family of dots (3D QDs) grows on terraces and undergoes an explosive nucleation with an order of magnitude change in density within 0.2 ML above a critical coverage θ c~1 .57 ML. Their volume is larger than the deposited volume because of a sizable surface-mass transport during growth. The WL is also involved and its thickness is reduced progressively by the supply of adatoms to QDs until the barrier for nucleation increases and the nucleation process ends [2]. We have previously used periodic growth interruption (GI) of the In flux to monitor the surface-mass transport [3], the size distribution of QDs [4], their scale invariance [5], and the

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Balzarotti

2008

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…The SQD nucleation is sensitive on both the In deposition amount (θ ) and the substrate temperature (T sub ). Near the critical point, a 0.05-monolayer (ML) change of θ will vary QD density from 0 µm −2 to ∼ 100 µm −2 , [11] and a higher T sub will delay the nucleation due to In evaporation. In fact, a tiny variation of the real T sub exists on each substrate, making a constant nominal θ impractical.…”

Section: Introductionmentioning

confidence: 99%

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Shang

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ ) for SQD growth, according to the measured critical θ for test QD nucleation (θ c ). The proper ratio θ /θ c , with a large tolerance of the variation of the real substrate temperature (T sub ), is 0.964 − 0.971 at the edge and > 0.989 but < 0.996 in the center of a 1/4-piece semi-insulating wafer, and around 0.9709 but < 0.9714 in the center of a 1/4-piece N + wafer as shown in the evolution of QD size and density as θ /θ c varies. Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy, among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm. The higher T sub in the center forms diluter, taller and uniform QDs, and very dilute SQDs for a proper θ /θ c : only one 7-nm-height SQD in 25 µm 2 . On a 2-inch (1 inch = 2.54 cm) semi-insulating wafer, by using θ /θ c = 0.961, SQDs nucleate in a circle in 22% of the whole area. More SQDs will form in the broad high-T sub region in the center by using a proper θ /θ c .

show abstract

“…6 One of the latest developments has been the fabrication of InAs/GaAs QPs. [7][8][9] These are elongated, vertical nanostructures which allow for exceedingly tunable exciton radiative lifetimes, estimated from few nanoseconds to tenths of milliseconds at low temperatures, when embedded in a vertical field effect device.…”

mentioning

confidence: 99%

“…Despite the debate around certain aspects related with their growth, InAs/GaAs selfassembled nanostructures are among the best known heteroepitaxial systems. 6 One of the latest developments has been the fabrication of InAs/GaAs QPs [7][8][9] These are elongated, vertical nanostructures which allow for exceedingly tunable exciton radiative lifetimes, estimated from few nanoseconds to tenths of milliseconds at low temperatures, when embedded in a vertical field effect device. 7 Such feature is of interest for quantum memories or highly non-linear electro-optical devices.…”

mentioning

confidence: 99%

Strain driven migration of In during the growth of InAs/GaAs quantum posts

et al. 2013

View full text Add to dashboard Cite

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures

show abstract

The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding

Cited by 5 publications

References 59 publications

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Contact Info

Product

Resources

About