Strain driven migration of In during the growth of InAs/GaAs quantum posts

Alonso-Álvarez, D.; Alén, Benito; Ripalda, J. M.; Rivera, Alejandro; Taboada, A. G.; Llorens, J. M.; González, Y.; González, L.; Briones, F.

doi:10.1063/1.4818358

Cited by 11 publications

(7 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At the moment, only a few techniques, e.g. reflection high energy electron diffraction (RHEED) 19 , in-situ accumulated stress measurements 20 , and spectroscopic ellipsometry 21 , can give real time information during the growth and thereby help monitoring the growth. But if such techniques provide valuable information about the growth surface, the averaging nature of the techniques make them of little use when study atomic-scale processes such as intermixing or segregation.…”

Section: Introductionmentioning

confidence: 99%

Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

et al. 2012

View full text Add to dashboard Cite

The growth of self-assembled quantum dots has been intensively studied in the last decade. Despite substantial efforts, a number of details of the growth process remain unknown. The reason is the inability of current characterization techniques to image the growth process in real time. In the current work this limitation is alleviated by the use of kinetic Monte-Carlo simulations in conjunction with cross-sectional scanning tunneling microscopy. The two techniques are used to study the method of strain engineering as a procedure to control the height of quantum dots. We show for the first time that fully three-dimensional kinetic Monte-Carlo simulations can be matched with the experimentally obtained morphology of buried quantum dots and that combination of the two techniques provides details of the growth process that hitherto could not be obtained.

show abstract

Section: Introductionmentioning

confidence: 99%

Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The areal densities of all SQD samples were measured to be ~3.0 × 10 10 cm −2 , while the average QD height was ~8.4 nm. All SQDs are found to be uniform and consistent; however, the SQDs in sample A are slightly larger than those in sample B, which are slightly larger than those in sample C. Strain induced from lower layers is the likely cause of this [26][27][28]. The BQDs would induce slight variations in the surface strain directly over each QD, which is averaged generally over the entire surface.…”

Section: Resultsmentioning

confidence: 90%

Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

et al. 2022

View full text Add to dashboard Cite

Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface quantum dots (SQDs), coupled to an injection layer of either one layer of In0.4Ga0.6As buried QDs (BQDs) or an In0.15Ga0.85As quantum well (QW), both through a 10 nm GaAs thin spacer. Spectroscopic measurements show that carrier capture and emission efficiency for SQDs in the BQD injection structure is better than that of the QW injection, due to strong physical and electrical coupling between the two QD layers. In the case of QW injection, although most carriers can be collected into the QW, they then tunnel into the wetting layer of the SQDs and are subsequently lost to surface states via non-radiative recombination. Therefore, the QW as an injection source for SQDs may not work as well as the BQDs for stacking coupled SQDs structures.

show abstract

“…This kind of nanostructures have a three dimensional shape and, thus, the common equations used to calculate the optimum strain balanced condition can not be used, as the strain is inhomogeneous and the layer thicknesses are not well defined. [12][13][14] In this work we use the in-situ accumulated stress measurements, as described above, to obtain the real stress that introduces the QDs and the most appropriate GaAsP thickness and composition that exactly compensates that stress.…”

Section: Resultsmentioning

confidence: 99%

In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts

Alonso-Álvarez.,

Alén,

Ripalda

et al. 2011

Preprint

Self Cite

View full text Add to dashboard Cite

In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality.

show abstract

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Cited by 11 publications

References 19 publications

Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts

Contact Info

Product

Resources

About