The impurity size-effect and phonon deformation potentials in wurtzite GaN

Kluth, Elias; Wieneke, Matthias; Bläsing, J.; Witte, Hartmut; Lange, Karsten; Dadgar, A.; Goldhahn, R.; Feneberg, Martin

doi:10.1088/1361-6641/ab9fab

Cited by 5 publications

(2 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, these equations are more versatile in evaluating the strain along each axis in c-plane GaN. For wurtzite GaN, the phonon deformation potentials a E2 , b E2 , and c E2 are − 850 ± 25 cm −1 , − 920 ± 60 cm −1 , and 65 ± 20 cm −1 , respectively 28,29 . The elastic stiffness constants C 13 and C 33 are 93.4 GPa and 391.0 GPa, respectively 30 .…”

Section: Derivation Of the Raman Frequency-to-strain Conversion Equationmentioning

confidence: 99%

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Takeuchi,

Ogura,

Hasuike

et al. 2024

Sci Rep

View full text Add to dashboard Cite

Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with $$z(xx)\overline{z }$$ z ( x x ) z ¯ and $$z(yx)\overline{z }$$ z ( y x ) z ¯ polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

show abstract

Section: Derivation Of the Raman Frequency-to-strain Conversion Equationmentioning

confidence: 99%

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Takeuchi,

Ogura,

Hasuike

et al. 2024

Sci Rep

View full text Add to dashboard Cite

show abstract

“…In addition, the XRD data could be used to quantify the substitution of Zn using an equation describing the size effect of impurities on the lattice constant: ∆a/a = β size N i (48)(49)(50). Here, a is the lattice constant, Δa is the difference between the lattice constants, β size is the contraction coefficient given as (r i − r h )/ (r h × N h ) (where r i is the tetrahedral covalent radius of the impurity element (that is, Zn), r h is the tetrahedral covalent radius of the host element (that is, In), N h is the concentration of the host atom), and N i is the concentration of the impurity (48)(49)(50). From this relation, it was found that the Zn/In ratio for the p-InAs NCs is 0.17, indicating that 15% of In atoms in the lattice NCs are substituted with Zn.…”

Section: Channelmentioning

confidence: 99%

P - and N -type InAs nanocrystals with innately controlled semiconductor polarity

Yoon,

Kim,

Kim

et al. 2023

Sci. Adv.

View full text Add to dashboard Cite

InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n - and p -type semiconductors in such devices, InAs NCs typically exhibit only n -type characteristics. Here, we report InAs NCs with controlled semiconductor polarity. Both p - and n -type InAs NCs can be achieved from the same indium chloride and aminoarsine precursors but by using two different reducing agents, diethylzinc for p -type and diisobutylaluminum hydride for n -type NCs, respectively. This is the first instance of semiconductor polarity control achieved at the synthesis level for InAs NCs and the entire semiconductor nanocrystal systems. Comparable field-effective mobilities for holes (3.3 × 10 −3 cm 2 /V·s) and electrons (3.9 × 10 −3 cm 2 /V·s) are achieved from the respective NC films. The mobility values allow the successful fabrication of complementary logic circuits, including NOT, NOR, and NAND comprising photopatterned p - and n -channels based on InAs NCs.

show abstract

Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy

Naito,

Ueno,

Fujioka

2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

The epitaxial growth of heavily Ge‐doped GaN films using pulsed sputtering deposition (PSD) on AlN (0001)/sapphire substrates is presented and the correlations among their structural, electrical, and optical properties are investigated. High‐quality Ge‐doped PSD‐GaN films are grown with electron concentrations of 0.33–4.4 × 1020 cm−3. Notably, cathode luminescence spectra reveal the absence of defect‐induced emissions associated with Ga vacancies (2.3–2.4 eV), consistent with the high electron mobilities of the films. As the electron concentration increases, the optical bandgap also increases. This correlation can be explained by combining the theoretical formulas for the Burstein–Moss shift and the bandgap renormalization effects. Remarkably, the optical bandgap reaches 3.84 eV at 4.4 × 1020 cm−3 carrier concentration, marking the highest value reported for the optical bandgap of GaN. These results indicate the potential of heavy Ge doping in GaN via PSD for applications in highly transparent conductive layers and tunneling junctions within GaN‐based optoelectronic devices.

show abstract

The impurity size-effect and phonon deformation potentials in wurtzite GaN

Cited by 5 publications

References 41 publications

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

P - and N -type InAs nanocrystals with innately controlled semiconductor polarity

Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy

Contact Info

Product

Resources

About