The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers

Zhang, Yuanwen; Yu, Lei; Li, Kai; Pi, Hui; Diao, Jia-Sheng; Wang, Xingfu; Yue, Shuai; Zhang, Chongzhen; Hu, Wenxiao; Song, Weidong; Li, Shuti

doi:10.1016/j.spmi.2015.02.004

Cited by 42 publications

(11 citation statements)

References 24 publications

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“…Целесообразно использование дополнительных слоев [14][15][16], сверхрешеток [17,18] и барьеров специальной формы [19,20], которые увеличивают перекрытие волновых функций электрона и дырки в квантовых ямах и, следовательно, скорости излучательной рекомбинации. Этому же способствует уменьшение квантово-размерного эффекта Штарка [13] и поляризационных полей [12,21,22].…”

Section: Introductionunclassified

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Иванов¹,

Клочков²

2022

Журнал Технической Физики

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A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN / GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN / GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.

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Section: Introductionunclassified

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Иванов¹,

Клочков²

2022

Журнал Технической Физики

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“…Researchers also designed the hole injection layers inserted between EBL and MQWs to effectively relieve the polarization-induced valence band bending [16]. Moreover, EBLs with graded composition [17], V-shaped structures [18], two-step tapered structures [19,20] as well as polarization doped layers [21] show favorable potentials for UV LEDs. However, most of these methods could still suffer from the Mg diffusion issue.…”

Section: Introductionmentioning

confidence: 99%

BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer

Gu¹,

Lu²,

Lin³

et al. 2021

J. Phys. D: Appl. Phys.

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The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1 × 1020 cm−3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing ultraviolet LED structures.

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“…This result proved that the study of EBL variation can make a breakthrough in efficiency improvement in AlGaN‐based DUV‐LEDs. Although many reports demonstrated enhanced DUV‐LED simulation results through EBL modification, practical devices were reported in only a few papers . Simulation studies of the insertion of gradient EBLs (GEBLs) have been attempted by some groups.…”

Section: Introductionmentioning

confidence: 99%

Efficiency Improvement of Deep‐Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

Kim

Shin

et al. 2017

Physica Status Solidi (a)

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In this paper, a gradient electron blocking layer (GEBL) is introduced to improve efficiency of deep‐ultraviolet light‐emitting diodes (DUV‐LEDs). Various structures of DUV‐LEDs are simulated to determine the energy band diagram variation and carrier injection mechanism resulting from the insertion of the GEBL. The simulation results show the improved electron and hole transport behavior in AlGaN multi quantum wells (MQWs). Especially, the injection efficiency of holes is improved with the increasing number of GEBL steps, which lead to the enhancement of internal quantum efficiency (IQE). The DUV‐LED structures with GEBL are grown in a high‐temperature metal‐organic chemical vapor deposition (HT‐MOCVD) system. Electroluminescence (EL) spectra show that the emission intensity at a wavelength of 280 nm from a DUV‐LED with a 12‐steps EBL is about 2.3 times that from a DUV‐LED with a single EBL.

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The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers

Cited by 42 publications

References 24 publications

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer

Efficiency Improvement of Deep‐Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

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