The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

New access resistance extraction methodology for 14nm FD-SOI technology

“…The obtained results therefore show that, in this case, the access resistance is a strong function of V g, as suggested in [3]. This result hence explains the lack of linearity observed on Yfunction [9] for advanced MOS technologies and the necessity to find a new model in order to extract mobility with precision.…”

“…14 to 17 are shown in inset. Different models of variation of the access resistance with V g have been tested (linear reduction or hyperbolic as in [3]), but none have 72 been found to reproduce correctly the drain current, contrarily to Eq. (3).…”

“…[n addition, the downscaling of the channel length also induces an apparent decrease of the mobility [2]. Recently, in some specific cases, this mobility reduction has been interpreted as the presence of a parasitic access transistor, induced by the coupling between the gate and the edges of the channel [3], In this context, the accurate extraction of the MOSFET access resistance at ultra-short dimension is required.…”

“…The problem is that this method uses the Y function [9] to extract ~, hence assuming a constant (or slightly varying) access resistance with gate bias. Moreover this method has been reported to give negative value of access resistance for advanced technologies [3], yielding wrong extraction of mobility attenuation coefficient 91 from 91(~) plot III.…”

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

“…This quantum resistance exhibits a 1/V G dependence, and is of the order of 10-20 Ω.V.μm [23] leading to about 10% decrease of linear current in typical 14nm-like devices.…”